Platform and method of operating for integrated end-to-end gate contact process

ABSTRACT

A method is provided for gate contact formation on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform (CMP) hosting one or more film-forming modules, one or more etching modules, and one or more transfer modules. A workpiece having a contact feature formed therein, and inspected throughout, the contact feature having a semiconductor contact surface exposed, is received into the CMP. A metal layer is deposited within the contact feature after the workpiece is treated to remove contamination. The integrated sequence of processing steps is executed within the CMP without leaving the controlled environment, the transfer modules used to transfer the workpiece between the modules while maintaining the workpiece within the controlled environment.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims the benefit of U.S. ProvisionalApplication No. 62/645,685, filed on Mar. 20, 2018, entitled “SubstrateProcessing Tool with Integrated Metrology and Method of Using,” U.S.Provisional Application No. 62/794,315, filed on Jan. 18, 2019 entitled“Platform and Method for Operating for Integrated End-to-End GateContact Process,” U.S. Provisional Application No. 62/787,607, filed onJan. 2, 2019, entitled “Self-Aware and Correcting Heterogeneous Platformincorporating Integrated Semiconductor Processing Modules and Method forusing same,” U.S. Provisional Application No. 62/787,608, filed on Jan.2, 2019, entitled “Self-Aware and Correcting Heterogeneous Platformincorporating Integrated Semiconductor Processing Modules and Method forusing same,” and U.S. Provisional Application No. 62/788,195, filed onJan. 4, 2019, entitled “Substrate Processing Tool with IntegratedMetrology and Method of using,” which is incorporated herein byreference in its entirety.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a processing platform and methods forsemiconductor processing using the platform, and more particularly to amethod for forming a gate contact.

Background of the Invention

As the integration density of semiconductor devices continues toincrease and the critical dimensions associated with such devicescontinue to decrease, there has been a corresponding increase ininterest in identifying materials and processes for producing lowresistance materials that maintain or reduce signal delay. Silicide andsalicide (self-aligned silicide) materials and processes have beenwidely used to lower the sheet resistance and contact resistance for thegate conductor and source/drain regions of MOS devices.

As devices are scaled to smaller and smaller features and techniques areimplemented to try and address the issues that result from scaling, itis important to monitor the fabrication process at various stages of theprocess flow to determine whether the feature attributes are withinspecification, and if not, to adjust the process to either bring theworkpiece within specification or to bring subsequently processedworkpieces within specification.

In conventional gate contact formation, the process is performed usingmultiple separate stand-alone tools for high-volume manufacturing.Wafers are sequentially loaded into one tool, subjected to one processstep in that tool, then removed to ambient environment and placed inqueue to be loaded into the next tool, and so on until the multiplesteps of the gate contact flow are complete. Time spent waiting in queuefor each tool is referred to as Q-time, and high Q-times result in lowerproduction rates. Different operations in the process flow may takedifferent amounts of time such that throughput matching of tools is aproduction challenge.

Each tool in the process flow may be part of a tool cluster. Forexample, five identical etch tools can be clustered in combination witha transfer tool so that 5 wafers can be etched concurrently at one stepof the process flow to enable high-volume production. The multiplicityof these cluster tools provides a benefit if a tool goes out of servicefor any reason. If 1 tool in a 5-tool cluster goes out of service for 1week, then production can continue, albeit at only 80% capacity. Thus,each stand-alone tool in the gate contact flow may be a cluster ofidentical tools to prevent an out of service tool from shutting downproduction completely, and clustering may be used to minimize throughputmatching challenges.

In conventional gate contact formation, if measurements are needed todetermine whether the process is operating within specification, astand-alone metrology tool may be included, where a workpiece isperiodically removed from the process flow for measurements to be taken,which are often destructive measurements using a measurement pad on theworkpiece, and the results can be fed back to the process flow tools foradjustments to downstream steps in the process flow, or adjustments toupstream steps for future wafers. This process involves exposure to theambient environment, Q-time waiting for the metrology tool to beavailable, and lengthy measurement times for results to be obtained,such that significant time may pass before data is available to enableadjustments to be made to the process flow in either a feed-back orfeed-forward manner. While real-time measurements of workpieceattributes taken in the process chamber would be ideal, exposure of themeasurement devices to process gases is problematic, making real-time,in situ measurement and control logistically difficult or impossible.

Thus, the conventional approach of using multiple separate stand-alonetools (single or clustered) for high-volume manufacturing can lead toissues including but not limited to Q-time oxidation (i.e., as thewafers sit between tools waiting for their turn in the next tool, theycan be subjected to oxidation from the ambient environment), defectivityfrom environmental exposure between tools, cost challenges due tothroughput matching difficulties, temporal tool drift (e.g., EPE), realtime chamber matching (e.g., yield and EPE), and lack of real-timeworkpiece measurement and process control. There is a need to addressthese and other issues to enable high-volume manufacturing with gatecontact formation techniques.

SUMMARY OF THE INVENTION

According to embodiments, a method of forming a gate contact on asemiconductor workpiece is provided using an integrated sequence ofprocessing steps executed on a common manufacturing platform hosting aplurality of processing modules including one or more film-formingmodules, one or more etching modules, and one or more transfer modules.In one embodiment, the integrated sequence of processing steps includesreceiving a workpiece into the common manufacturing platform, theworkpiece having a contact feature formed therein, the contact featurehaving a semiconductor contact surface exposed at a bottom of thecontact feature, the semiconductor contact surface containing silicon,or germanium, or an alloy thereof, and treating the semiconductorcontact surface in one of the one or more etching modules to removecontamination therefrom. The integrated sequence of processing stepsfurther includes depositing a metal layer within the contact feature inone of the one or more film-forming modules and optionally, applying aconductive capping layer on the deposited metal layer in one of the oneor more film-forming modules. Subsequently, the integrated sequence ofprocessing steps includes forming a metal silicide and/or germanidelayer by reaction of at least a portion of the deposited metal layerwith the semiconductor contact surface. Also, the integrated sequence ofprocessing steps includes inspecting the workpiece before and/or afterany one of the treating, depositing, applying, and forming steps tomeasure one or more attributes of the workpiece, determine whether themeasured one or more attributes meet target specifications, and when anexcursion from target specifications occurs, take corrective actionbefore, during, or after any one of the treating, depositing, applying,and forming steps. The integrated sequence of processing steps isexecuted in a controlled environment within the common manufacturingplatform and without leaving the controlled environment, and wherein theone or more transfer modules are used to transfer the workpiece betweenthe plurality of processing modules while maintaining the workpiecewithin the controlled environment.

In a related embodiment, the depositing of a metal layer in theintegrated sequence of processing steps may further comprise applying aself-assembled monolayer on an adjacent topography to the contactfeature and on sidewall surfaces of the contact feature, selectivelydepositing the metal layer on the semiconductor contact surface at thebottom of the contact feature, and removing the self-assembled monolayerexposed on the adjacent topography and sidewall surfaces.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate embodiments of the invention and,together with a general description of the invention given above, andthe detailed description given below, serve to explain the invention.

FIGS. 1A-1F are schematic cross-sectional diagrams illustrating oneembodiment of a gate contact formation method.

FIGS. 2A-2F are schematic cross-sectional diagrams illustrating oneembodiment of a gate contact formation method.

FIG. 3 is a flow chart diagram illustrating one embodiment of anintegrated process flow for gate contact formation.

FIG. 4A is a schematic diagram illustrating one embodiment of a commonmanufacturing platform for performing gate contact formation using apatterned mask layer method.

FIG. 4B is a schematic diagram illustrating another embodiment of acommon manufacturing platform for performing gate contact formationusing a patterned mask layer method.

FIG. 5A is a schematic diagram illustrating one embodiment of a commonmanufacturing platform for performing gate contact formation using anarea-selective deposition method.

FIG. 5B is a schematic diagram illustrating another embodiment of acommon manufacturing platform for performing gate contact formationusing an area-selective deposition method.

FIG. 6 is a schematic diagram illustrating one embodiment of a commonmanufacturing platform for performing an integrated sequence ofprocessing steps.

FIG. 7A is a schematic diagram illustrating in top view antherembodiment of a common manufacturing platform for performing anintegrated sequence of processing steps, and FIG. 7B is a side view inpartial cross-section of a measurement module incorporated in the commonmanufacturing platform of FIG. 7A.

FIG. 7C is a schematic diagram illustrating in top view anotherembodiment of a common manufacturing platform for performing anintegrated sequence of processing steps, and FIG. 7D is a side view inpartial cross-section of a measurement module incorporated in the commonmanufacturing platform of FIG. 7C.

DETAILED DESCRIPTION

Methods using an integrated platform for gate contact formation arepresented. However, one skilled in the relevant art will recognize thatthe various embodiments may be practiced without one or more of thespecific details, or with other replacement and/or additional methods,materials, or components. In other instances, well-known structures,materials, or operations are not shown or described in detail to avoidobscuring aspects of various embodiments of the invention.

Similarly, for purposes of explanation, specific numbers, materials, andconfigurations are set forth in order to provide a thoroughunderstanding of the invention. Nevertheless, the invention may bepracticed without specific details. Furthermore, it is understood thatthe various embodiments shown in the figures are illustrativerepresentations and are not necessarily drawn to scale. In referencingthe figures, like numerals refer to like parts throughout.

Reference throughout this specification to “one embodiment” or “anembodiment” or variation thereof means that a particular feature,structure, material, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention butdoes not denote that it is present in every embodiment. Thus, thephrases such as “in one embodiment” or “in an embodiment” that mayappear in various places throughout this specification are notnecessarily referring to the same embodiment of the invention.Furthermore, the particular features, structures, materials, orcharacteristics may be combined in any suitable manner in one or moreembodiments. Various additional layers and/or structures may be includedand/or described features may be omitted in other embodiments.

Additionally, it is to be understood that “a” or “an” may mean “one ormore” unless explicitly stated otherwise.

Various operations will be described as multiple discrete operations inturn, in a manner that is most helpful in understanding the invention.However, the order of description should not be construed as to implythat these operations are necessarily order dependent. In particular,these operations need not be performed in the order of presentation.Operations described may be performed in a different order than thedescribed embodiment. Various additional operations may be performedand/or described operations may be omitted in additional embodiments.

As used herein, the term “substrate” means and includes a base materialor construction upon which materials are formed. It will be appreciatedthat the substrate may include a single material, a plurality of layersof different materials, a layer or layers having regions of differentmaterials or different structures in them, etc. These materials mayinclude semiconductors, insulators, conductors, or combinations thereof.For example, the substrate may be a semiconductor substrate, a basesemiconductor layer on a supporting structure, a metal electrode or asemiconductor substrate having one or more layers, structures or regionsformed thereon. The substrate may be a conventional silicon substrate orother bulk substrate comprising a layer of semi-conductive material. Asused herein, the term “bulk substrate” means and includes not onlysilicon wafers, but also silicon-on-insulator (“SOI”) substrates, suchas silicon-on-sapphire (“SOS”) substrates and silicon-on-glass (“SOG”)substrates, epitaxial layers of silicon on a base semiconductorfoundation, and other semiconductor or optoelectronic materials, such assilicon-germanium, germanium, gallium arsenide, gallium nitride, andindium phosphide. The substrate may be doped or undoped.

As used herein the term “workpiece” means a composition of materials orlayers formed on a substrate during one or more phases of asemiconductor device manufacturing process, the workpiece ultimatelycomprising the semiconductor device at a final stage of processing.

The present embodiments include methods for gate contact formation thatutilize a common manufacturing platform in which multiple process stepsare performed on the common platform within a controlled environment,for example, without breaking vacuum between operations. The integratedend-to-end platform may include etching modules, film-forming modules,and annealing modules and is configured to transfer a workpiece from onemodule to another while maintaining the workpiece in a controlledenvironment, e.g., without breaking vacuum or leaving an inert gasprotective environment, and thus avoiding exposure to an ambientenvironment. Any gate contact formation process may be carried out onthe common manufacturing platform, and the integrated end-to-endplatform will enable high-volume manufacturing at reduced cost withimprovement to yield, defectivity levels and EPE.

As used herein, an “etching module” refers to any type of processingtool for removing all or a portion of a film, layer, residue orcontaminant on a workpiece in a process chamber. The etching module maybe a single wafer tool, a batch processing tool, or a semi-batchprocessing tool. The types of etching that may be performed in theetching module include, by way of example and not limitation, chemicaloxide removal (COR), dry (plasma) etching, reactive ion etching, wetetching using immersion or non-immersion techniques, atomic layeretching, chemical-mechanical polishing, cleaning, ashing, lithography,etc., and the process may be isotropic, anisotropic, selective, etc.

As used herein, a “film-forming module” refers to any type of processingtool for depositing or growing a film or layer on a workpiece in aprocess chamber. The film-forming module may be a single wafer tool, abatch processing tool, or a semi-batch processing tool. The types offilm deposition or growth that may be performed in the film-formingmodule include, by way of example and not limitation, chemical vapordeposition, plasma-enhanced or plasma-assisted chemical vapordeposition, atomic layer deposition, physical vapor deposition, thermaloxidation or nitridation, elevated temperature deposition, etc., and theprocess may be isotropic, anisotropic, conformal, selective, blanket,etc.

As used herein, an “annealing module” refers to any type of processingtool for applying a thermal treatment to a workpiece in a processchamber. The annealing module may be a single wafer tool, a batchprocessing tool, or a semi-batch processing tool. The types of thermaltreatment processes that may be performed in the annealing moduleinclude, by way of example and not limitation, rapid thermal annealing(RTP), flash lamp annealing, laser annealing, or a process performed ina furnace.

As used herein, “module” generally refers to a processing tool with allof its hardware and software collectively, including the processchamber, substrate holder and movement mechanisms, gas supply anddistribution systems, pumping systems, electrical systems andcontrollers, etc. Such details of the modules are known in the art andtherefore not discussed herein.

“Controlled environment” as used herein refers to an environment inwhich the ambient atmosphere is evacuated and either replaced with apurified inert gas or a low-pressure vacuum environment. A vacuumenvironment is well below atmospheric pressure and is generallyunderstood to be 10⁻⁵ Torr or less, for example 5×10⁻⁸ Torr or less.However, the controlled environment may include any sub-atmosphericpressure environment within the processing tool that is isolated fromambient air conditions or environments greater than atmosphericpressure. Further, the controlled environment within the processing toolis not required to be a constant pressure, or the same pressure, withineach portion of the processing tool. For example, pressure within thecontrolled environment may vary within each chamber of the processingtool at different times to enable different processing conditions withina respective chamber or minimize pressure differentials between two ormore chambers when substrates are transferred between chambers.

In its broadest terms, embodiments of the disclosure relate to anintegrated sequence of processing steps performed on a workpiece andexecuted on a common manufacturing platform hosting a plurality ofprocessing modules including one or more film-forming modules, one ormore etching modules, and one or more transfer modules. The integratedsequence of processing steps includes receiving a workpiece into thecommon manufacturing platform, the workpiece having a contact featureformed therein, the contact feature having a semiconductor contactsurface exposed at a bottom of the contact feature, the semiconductorcontact surface containing silicon, or germanium, or an alloy thereof.Using the one or more etching modules, the semiconductor contact surfaceis treated to remove contamination therefrom. Then, using the one ormore film-forming modules, a metal-containing layer is deposited withinthe contact feature. Afterwards, using the one or more film-formingmodules, an optional conductive capping layer is applied on thedeposited metal-containing layer. Subsequently, at least a portion ofthe deposited metal-containing layer is reacted with the semiconductorcontact surface to form a metal silicide and/or germanide layer. Inaddition, the workpiece is inspected before and/or after any one of thetreating, depositing, applying, and forming steps to measure one or moreattributes of the workpiece, determine whether the measured one or moreattributes meet target specifications, and when an excursion from targetspecifications occurs, take corrective action before, during, or afterany one of the treating, depositing, applying, and forming steps.Further, the integrated sequence of processing steps is executed in acontrolled environment within the common manufacturing platform andwithout leaving the controlled environment, and the one or more transfermodules are used to transfer the workpiece between the plurality ofprocessing modules while maintaining the workpiece within the controlledenvironment.

Embodiments may include different methods of depositing themetal-containing layer within the contact feature, and therefore on topof the semiconductor contact surface. Thus, the integrated sequence ofprocessing steps may be directed to a patterned mask approach to metaldeposition or an area-selective deposition (ASD) approach to metaldeposition.

In addition, embodiments may include layers and surfaces that arecomposed from a variety of materials. The metal-containing layers mayinclude, by way of example and not limitation, Cu, Al, Ta, Ti, W, Ru,Co, Ni, or Mo. The semiconductor contact surface may include, by way ofexample and not limitation, silicon, polysilicon, or silicon germanium.Additionally, the optional conductive capping layer may include, by wayof example and not limitation, TiN, or TaN. Layers composed ofdielectric material may include, by way of example and not limitation,SiO₂, a low-k dielectric material, or a high-k dielectric material.Low-k dielectric materials have a nominal dielectric constant less thanthe dielectric constant of SiO₂, which is approximately 4 (e.g., thedielectric constant for thermally grown silicon dioxide can range from3.8 to 3.9). High-k materials have a nominal dielectric constant greaterthan the dielectric constant of SiO₂.

Low-k dielectric materials may have a dielectric constant of less than3.7, or a dielectric constant ranging from 1.6 to 3.7. Low-k dielectricmaterials can include fluorinated silicon glass (FSG), carbon dopedoxide, a polymer, a SiCOH-containing low-k material, a non-porous low-kmaterial, a porous low-k material, a spin-on dielectric (SOD) low-kmaterial, or any other suitable dielectric material. The low-kdielectric material can include BLACK DIAMOND® (BD) or BLACK DIAMOND® II(BDII) SiCOH material, commercially available from Applied Materials,Inc., or Coral® CVD films commercially available from Novellus Systems,Inc. Other commercially available carbon-containing materials includeSILK® (e.g., SiLK-I, SiLK-J, SiLK-H, SiLK-D, and porous SiLKsemiconductor dielectric resins) and CYCLOTENE® (benzocyclobutene)available from Dow Chemical, and GX-3™ and GX-3P™ semiconductordielectric resins available from Honeywell.

Low-k dielectric materials include porous inorganic-organic hybrid filmscomprised of a single-phase, such as a silicon oxide-based matrix havingCH₃ bonds that hinder full densification of the film during a curing ordeposition process to create small voids (or pores). Stillalternatively, these dielectric layers may include porousinorganic-organic hybrid films comprised of at least two phases, such asa carbon-doped silicon oxide-based matrix having pores of organicmaterial (e.g., porogen) that is decomposed and evaporated during acuring process.

In addition, low-k materials include a silicate-based material, such ashydrogen silsesquioxane (HSQ) or methyl silsesquioxane (MSQ), depositedusing SOD techniques. Examples of such films include FOx® HSQcommercially available from Dow Corning, XLK porous HSQ commerciallyavailable from Dow Corning, and JSR LKD-5109 commercially available fromJSR Microelectronics.

Embodiments of the invention address integrated gate contact formationprocessing and the need for performing substrate metrology during theintegrated gate contact formation processing. During the processing,substrate metrology may be performed within the common manufacturingplatform following any deposition, etching, or annealing module. In oneexample, substrate metrology is performed following the metal layerdeposition step to measure and characterize layer properties and, basedon substrate metrology data, perform remedial actions on the metal layersuch as increasing or decreasing the thickness of the metal layer. Inanother example, substrate metrology is performed following theformation of the metal silicide and/or germanide layer to measure andcharacterize layer properties and, based on substrate metrology data,perform remedial actions on the layer such as applying additional heat.Further, artificial intelligence (AI) may be used to analyze thesubstrate metrology results and predict future layer properties.

Reference is now made to the drawings, where like reference numeralsdesignate identical or corresponding parts throughout the several views.

FIGS. 1A-1F schematically depict embodiments of a gate contact formationmethod in which a patterned mask layer is used. In FIG. 1A, thesemiconductor workpiece, generally referred to as pattern mask workpiece10, comprises a silicon-containing substrate 12 having a gate structure16 formed thereon and therein. The substrate 12 may comprise singlecrystal silicon, poly-crystalline silicon, silicon-germanium (SiGe_(x)),silicon-carbon (SiC_(y)), or silicon-germanium-carbon (SiGe_(x)C_(y)),or any combination of two or more thereof, and wherein x and y aregreater than or equal to 0. The gate structure 16 includes a gateelectrode 18, a gate insulation layer 22, and a gate spacer layer 20.The gate electrode 18 may include one or more layers including, forexample, one or more metal layers, one or more metal barrier layers, oneor more doped poly-crystalline silicon layers, and one or more caplayers. The gate insulation layer 22 may include, for example, aconventional gate dielectric, such as silicon dioxide (SiO₂), or a highdielectric constant (high-k) dielectric layer. The gate spacer layer 20may comprise one or more material layers, including, for example,silicon oxide (SiO₂, or SiO_(x)) and/or silicon nitride (Si₃N₄, orSiN_(y)), or any combination of two or more thereof, and wherein x and yare greater than or equal to 0, and is generally formed on the sidewallsof the gate electrode 18.

Also shown in FIG. 1A, the gate structure 16 further includeslightly-doped regions 24 and source/drain regions 26 formed in a surfaceregion of the silicon-containing substrate 12 using ion implant and/orGCIB infusion processes. Isolation regions 14 having silicide blockinglayers 28 may be formed adjacent the source/drain regions 26 to definethe active region of substrate 12 therebetween. A contact dielectricfilm 30 may be applied across the top surface of pattern mask workpiece10, adjacent blocking layers 28, isolation regions 14, source/drainregions 26, and gate structure 16. Additionally, a patterned mask 32 maybe applied adjacent the contact dielectric film 30, exposing a portionof the film 30. In alternative embodiments, the patterned masked 32 mayexpose multiple portions of the film 30.

As shown in FIG. 1B, a portion of a source/drain region 26 is exposed,hereinafter referred to as a semiconductor contact surface 33. Thepositioning of the patterned mask 32 adjacent to the contact dielectricfilm 30 exposes the portion of the contact dielectric film 30 that is tobe removed. Removal may then be performed by an etching process, such asa dry etching process, revealing the semiconductor contact surface 33.In alternative embodiments, multiple semiconductor contact surfaces 33may be revealed by using a patterned mask 32 with multiple points ofexposure. For example, a semiconductor contact surface 33 may berevealed adjacent to each source/drain region 26 present on substrate12, the invention herein being applied to each semiconductor contactsurface. However, for purposes of explanation, the invention isdescribed using a single semiconductor contact surface 33.

Additionally, alternative embodiments of the invention may begin withthe semiconductor contact surface 33 already exposed on pattern maskworkpiece 10. In these embodiments, FIG. 1B would serve as arepresentation of the starting point for the processing of pattern maskworkpiece 10.

As shown in FIG. 1C, a metal-containing layer 34 is deposited oversubstrate 12, including over the patterned mask 32 and the semiconductorcontact surface 33. The metal-containing layer 34 may comprise cobalt,nickel, titanium, hafnium, platinum, palladium, vanadium, niobium,tungsten, tantalum, zirconium or any alloy thereof. For example, themetal-containing layer 34 may comprise titanium or an alloy thereof. Themetal-containing layer 34 may be deposited using a vapor depositionprocess, such as a physical vapor deposition (PVD) process or variationsthereof, a chemical vapor deposition (CVD) process or variationsthereof, or an atomic layer deposition (ALD) process or variationsthereof. For example, nickel or a nickel alloy may be deposited using aPVD process, or titanium or a titanium alloy may be deposited using CVDor ALD. Prior to depositing the metal-containing layer 34, the substrate12 may be cleaned using a dry cleaning process to, for example, removenative oxide from the semiconductor contact surface 33.

Following the deposition of the metal-containing layer 34, as shown inFIG. 1D, or concurrently with deposition of the metal-containing layer34, a portion of the metal-containing layer 34 is reacted with anunderlying portion of substrate 12 to form a metal-dielectric alloy 38.Examples of the metal-dielectric alloy 38 include, without limitation,metal silicide or germanide. Specifically, in the embodiment shown, theportion of the substrate 12 that underlies the metal-containing layer 34is the semiconductor contact surface 33, or source/drain region 26 moregenerally. The reaction between the metal-containing layer 34 and thesubstrate 12 may proceed following deposition, for example using athermal process 36, such as a thermal anneal process, or may proceedduring deposition of the metal-containing layer 34, for example using athermal deposition process at a temperature sufficient to activate areaction between the metal and silicon (not shown). An un-reactedportion of the metal-containing layer 34 may remain, particularly on thepatterned mask 32 and the formed metal-dielectric alloy 38. Themetal-containing layer 34 over the semiconductor contact surface 33 maybe completely converted to a metal-dielectric alloy (illustrated in FIG.1E and FIG. 1F), or a bottom portion of the metal-containing layer 34may be converted, while a thinner layer of the metal-containing layer 34remains over the converted bottom portion (illustrated in FIG. 1D).

Optionally, a conductive capping layer 40 is applied on themetal-containing layer 34. The conductive capping layer 40 may compriseanother metal-containing layer, such as titanium nitride (TiN). In oneembodiment, the conductive capping layer 40 is applied over theunreacted portion of the metal-containing layer 34, and over themetal-dielectric alloy 38 if the metal-containing layer 34 is completelyconverted into the metal-dielectric alloy 38. In an alternativeembodiment, the metal-dielectric alloy formation may occur afterapplying the conductive capping layer 40 over the metal-containing layer34 rather than during or after deposition of the metal-containing layer34, such as by thermally annealing the pattern mask workpiece 10 usingthermal process 36 or by using a thermal deposition process for theconductive capping layer 40 at a temperature sufficient to activate areaction between the metal of the metal-containing layer 34 and silicon(not shown).

As shown in FIG. 1E, the un-reacted portion of the metal-containinglayer 34 may be removed from the pattern mask workpiece 10. Optionally,the conductive capping layer 40 may be removed as well, particularly ininstances where there is no remaining un-reacted metal-containing layer34 over the metal-dielectric alloy 38 or, in stances where there isremaining un-reacted metal-containing layer 34 over the metal-dielectricalloy 38, no further reaction is desired that would utilize theremaining un-reacted metal-containing layer 34. The un-reacted portionof the metal-containing layer 34, the patterned mask 32, and theconductive capping layer 40 may be removed from the pattern maskworkpiece 10 using a cleaning or etching process, such as a dryetching/cleaning process. Additionally, following this removal, thepattern mask workpiece 10 may be subjected to another thermal process,such as a thermal anneal process.

Thereafter, as shown in FIG. 1F, a dielectric layer 42 is deposited onthe pattern mask workpiece 10 to serve as inter-layer insulation betweenthe gate structure 16 and subsequent metal-interconnection layers (notshown) formed on the workpiece 10. The dielectric layer 42 may bedeposited using a vapor deposition process, such as a physical vapordeposition (PVD) process or variations thereof, a chemical vapordeposition (CVD) or variations thereof, or an atomic layer deposition(ALD) process or variations thereof. One or more via(s) 45 are preparedto expose metal-dielectric alloy 38 and, if optionally present, theconductive capping layer 40. The one or more via(s) 45 may be formedusing a via etch process, such as a dry etching process.

In an embodiment of the invention, the integrated sequence of processingsteps further comprises a treatment of the workpiece before depositingthe metal-containing layer. The treatment is performed to alter thesemiconductor contact surface. The treatment may clean a surface,de-oxidize a surface, oxidize a surface, form a barrier layer on asurface, or alter a surface termination on a surface, or any combinationthereof, and may include a single treatment step or multiple treatmentsteps. The common manufacturing platform may include one or moretreatment modules for performing the treatment(s) in the controlledenvironment. The treatment module(s) may be a film-forming module, anetching module, an annealing module or other gas or plasma treatmentmodule. In one example, a treatment module is included in the commonmanufacturing platform for depositing or forming a barrier or blockinglayer to inhibit deposition of material on a non-target surface and toprovide increased selectivity toward target surface relative to thenon-target surface. For example, the treatment may increase theselectivity to a value of at least 100:1, or at least 1000:1. In anembodiment, the workpiece is treated to add surface termination groups.The non-target surface may be treated to add termination groups that areless reactive with the material to thereby inhibit deposition thereon,or the target surface may be treated to add termination groups that aremore reactive with the material to thereby promote deposition thereon.For example, hydrophobic termination groups may be added to a non-targetoxide surface to inhibit deposition of metal on the oxide. In anotherexample, a target metal surface is de-oxidized to promote deposition ofmetal on the oxide-free metal surface.

In an embodiment of the invention, the integrated sequence of processingsteps comprises a treatment of the workpiece to form a self-assembledmonolayer (SAM) on the non-target surface. The SAM may be formed byexposing the workpiece to a reactant gas that contains a molecule thatis capable of forming a SAM on the surface. The SAM is a molecularassembly that is formed spontaneously on substrate surfaces byadsorption and organized into more or less large ordered domains. TheSAM can include a molecule that possesses a head group, a tail group,and a functional end group, and the SAM is created by the chemisorptionof head groups onto the surface from the vapor phase at room temperatureor above room temperature, followed by a slow organization of the tailgroups. Initially, at small molecular density on the surface, adsorbatemolecules form either a disordered mass of molecules or form an orderedtwo-dimensional “lying down phase,” and at higher molecular coverage,over a period of minutes to hours, begin to form three-dimensionalcrystalline or semicrystalline structures on the surface. The headgroups assemble together on the surface, while the tail groups assemblefar from the surface.

According to one embodiment, the head group of the molecule forming theSAM can include a thiol, a silane, or a phosphonate. Examples of silanesinclude molecules that include C, H, Cl, F, and Si atoms, or C, H, Cl,and Si atoms. Non-limiting examples of the molecule includeperfluorodecyltrichlorosilane (CF₃(CF₂)₇CH₂CH₂SiCl₃),perfluorodecanethiol (CF₃(CF₂)₇CH₂CH₂SH), chlorodecyldimethylsilane(CH₃(CH₂)₈CH₂Si(CH₃)₂Cl), and tertbutyl(chloro)dimethylsilane((CH₃)₃CSi(CH₃)₂Cl)).

The presence of the SAM on the non-target surface may be used to enablesubsequent selective deposition on the target surface (e.g., adielectric layer) relative to the non-target surface (e.g., a metallayer). This selective deposition behavior is unexpected and provides anew method for selectively depositing a film on the target surface whilepreventing or reducing deposition on the non-target surface. It isspeculated that the SAM density is greater on the non-target surfacerelative to on the target surface possibly due to higher initialordering of the molecules on the non-target surface relative to on thetarget surface.

According to a further embodiment, where a treatment step is performedon the non-target surface, the etching step may remove the treatmentlayer in addition to any material that deposits on the non-targetsurface, in one or more etching steps. Also, where the deposition andetching steps are repeated to build up the material on the targetsurface layer-by-layer, the treatment may likewise be repeated beforeeach deposition step, or less frequently as desired or needed, such asevery 5^(th) or 10^(th) repetition, or it may not need to be repeated,for example, repeating de-oxidation may not be needed if the workpieceis maintained in the controlled environment and not exposed to anoxidizing environment. Removal and subsequent repeated deposition of theSAM may be desired if the SAM becomes damaged during deposition of thematerial and/or during the etching process and therefore negativelyaffects deposition selectivity.

FIGS. 2A-2F schematically depict an embodiment of an area selectivedeposition (ASD) method in which a gate contact is formed for aworkpiece. FIG. 3 is a flow chart of a process flow 300 applicable tothe method of FIGS. 2A-2F. FIG. 5B illustrates an embodiment of a commonmanufacturing platform of the invention that may be used for performingprocess flow 300. The process flow 300 of FIG. 3 and the commonmanufacturing platform 500 b of FIG. 5B will be referenced throughoutthe following sequential discussion of FIGS. 2A-2F in which an ASDworkpiece 11 is described as it proceeds through an integrated sequenceof processing steps.

In operation 302 of process flow 300 and as shown in FIG. 2A, ASDworkpiece 11 is provided into the common manufacturing platform 500 b.The ASD workpiece 11 may include any number of material layers formed ona substrate 12, but at a minimum, the ASD workpiece 11 includes acontact dielectric film 30. As shown in FIG. 2A, the ASD workpiece 11includes an additional material layer, namely patterned mask 32. Thepatterned mask 32 exposes a portion of the contact dielectric film 30,wherein the exposed portion of the contact dielectric film 30 is removedby operation 304 to create a semiconductor contact surface 33 on the ASDworkpiece 11.

As shown in FIG. 5B, a transfer module 410 a may be used to bring theASD workpiece 11 into the controlled environment of the commonmanufacturing platform 500 b, which controlled environment is maintainedthroughout the process flow 300. The controlled environment may includea vacuum environment, where each operation in the process flow 300 isconducted without breaking vacuum, or an inert gas atmosphere, or acombination thereof. A single transfer module may be coupled betweeneach processing module or tool, or separate transfer modules 410 may beused for each tool transfer, as depicted in FIG. 5B. Transfer modules410 a-f may be collectively referred to herein as transfer modules 410where appropriate. Where different processing modules on the commonmanufacturing platform 500 b require different controlled environments,such as different vacuum pressures or vacuum in one module followed by amodule with inert gas atmosphere, multiple transfer modules 410 may beused where the transfer modules 410 assist in implementing thetransitions between the different controlled environments. While asingle transfer module may be useful in a cluster-type tool wheresame-type processing modules are positioned in a circle around thetransfer module, multiple transfer modules 410 may be more appropriatein an end-to-end platform configuration with different processing moduletypes such as that depicted in FIG. 5B. However, the embodiments hereindo not preclude an end-to-end platform configuration that utilizes asingle transfer module that is coupled to each of the processingmodules, or some configuration in between, for example, a commontransfer module for adjacent same-type processing modules that are usedin sequence.

As is well known in high volume manufacturing, a front-end module 402 amay be used to load a cassette of workpieces (not shown), sequentiallyline up the workpieces and insert them into a load lock, then into atransfer module 410 a in a controlled environment, and the transfermodule 410 a sequentially loads the workpieces into a processing module.In the common manufacturing platform 500 b of an embodiment of theinvention, in operation 302, the ASD workpiece 11, which has beenreceived into the controlled environment, is loaded by the transfermodule 410 a into a first etching module 420 hosted on the commonmanufacturing platform 500 b.

Referring to FIGS. 2B, 3, and 5B, in optional operation 304, in thefirst etching module 420, an etching process is performed to create acontact feature on ASD workpiece 11. For example, a dry etch process maybe used to remove the portion of the contact dielectric film 30 that isexposed by the pattern mask 32, resulting in the exposure of thesemiconductor contact surface 33. In other embodiments, ASD workpiece 11may be received with the semiconductor contact surface 33 alreadyexposed, thereby forgoing the need for optional operation 304.

Referring to FIGS. 3 and 5B, and further in operation 306, withoutleaving the controlled environment, e.g., without breaking vacuum,transfer modules 410 a and 410 b are used to transfer the ASD workpiece11 to a second etching module 420. In the second etching module 420, orin the transfer modules 410 a-410 b, ASD workpiece 11 is assessed forcontamination such as oxide deposits or other contamination, and anetching process may be used to remove the contamination. In oneembodiment, the etching process may be a non-plasma chemical etch toremove contamination or prepare the semiconductor contact surface 33 forsubsequent processing. Optionally, and as represented by FIGS. 2A-2F, ifASD workpiece 11 included a patterned mask 32, the second etching module420, or another plasma-based etching module, may also use anotheretching process to remove the patterned mask 32 to expose the underlyingcontact dielectric film 30.

Then, without leaving the controlled environment, e.g., without breakingvacuum, transfer modules 410 b and 410 c are used to transfer the ASDworkpiece 11 to a film-forming module 430. Referring to FIGS. 2C, 3, and5B, in optional operation 308 a self-assembled monolayer (SAM) 44 isapplied to ASD workpiece 11. Specifically, as shown in FIG. 2C, the SAM44, a barrier layer, is applied to the contact dielectric film 30 sothat the contact dielectric film 30 is rendered less attractive orreactive to the material to be deposited on the semiconductor contactsurface 33 in operation 310. In other words, the SAM 44 may be appliedto any exposed layer on the ASD workpiece 11 that is not thesemiconductor contact surface 33, or the SAM 44 is deposited at fasterrate on the contact dielectric surface 30 than on the semiconductorcontact surface 33 at the ratios described above. While the SAM 44 isthe exemplified barrier layer, it may be appreciated that the inventionis not limited solely to a SAM as a barrier layer. The SAM 44 may bereplaced with another barrier layer that has the effect of inhibitingdeposition of material on a surface treated with the barrier layer. Asshown, the common manufacturing platform 500 b may include identicalfilm-forming modules 430 on opposing sides of the transfer module 410 c.By mirroring the two sides of the platform 500 b, end-to-end processingcan be achieved for two workpieces concurrently, and if one film-formingmodule 430 goes out of service temporarily, the platform 500 b cancontinue to operate, at least at 50% capacity.

Subsequently, without leaving the controlled environment, e.g., withoutbreaking vacuum, transfer modules 410 c and 410 d are used to transferthe ASD workpiece 11 to a film-forming module 430. Referring to FIGS. 2Dand 3, in operation 310, in the film-forming module 430, ametal-containing layer 34 is selectively deposited on the semiconductorcontact surface 33. Due to the selectivity toward the semiconductorcontact surface 33 relative to the SAM 44, the metal-containing layer 34forms on the semiconductor contact surface 33 at a higher depositionrate than on any other portion, such as the contact dielectric film 30,of ASD workpiece 11. In one example, the metal-containing layer 34 mayinclude a metal film that contains Ti, Co, Ni, or Ru. Themetal-containing layer 34 may, for example, be deposited by CVD,plasma-enhanced CVD (PECLD), ALD, plasma-enhanced ALD (PEALD), orphysical vapor deposition (PVD). In some examples, the metal-containinglayer 250 may be deposited by ALD using alternating exposures of ametal-containing precursor. Again, the common manufacturing platform 500b may include two identical film-forming modules 430 on opposing sidesof the transfer module 410 d.

The exposure to deposition gases in film-forming module 430 may, inaddition to depositing the metal-containing layer 34 on thesemiconductor contact surface 33, deposit film nuclei on the SAM 44 as aresult of a loss of selectivity or insufficient selectivity. Loss ofdeposition selectivity can occur, for example, if the deposition processis carried out for too long. Insufficient or poor deposition selectivitycan occur, for example, if surface coverage of the SAM 44 is incompleteand contains voids on the contact dielectric film 30. In this instance,remedial actions may be taken to improve SAM 44 surface coverage, asdiscussed in greater detail below.

Referring to FIGS. 2E and 3, in operation 312, and without leaving thecontrolled environment, e.g., without breaking vacuum, the ASD workpiece11 is transferred to one or more etching modules to perform one or moreetching steps to expose the contact dielectric film 30 and therebyachieve the ASD on the semiconductor contact surface 33. In thisexample, and as shown in FIG. 5B, an etching step is performed to removethe SAM 44. Transfer modules 410 d and 410 e are used to transfer theASD workpiece 11 to a third etching module 420 hosted on the commonmanufacturing platform 500 b, e.g., transfer module 410 d removes theASD workpiece 11 from film-forming module 430 and transfers it totransfer module 410 e, which then delivers the ASD workpiece 11 into thethird etching module 420. Adjustments to the controlled environment maybe made in transfer modules 410 d and 410 e if the third etching module420 operates with different parameters than the film-forming module 430,such as different vacuum pressures. The etching process can include adry etching process, a wet etching process, or a combination thereof.Again, the common manufacturing platform 500 b may include identicalthird etching modules 420 on opposing sides of the transfer module 410e. Alternatively, the SAM 44 may be removed by a different method, suchas by heat treatment, in a designated treatment module or in one of theprocessing modules used in another step of the integrated sequence ofprocessing steps.

Then, without leaving the controlled environment, e.g., without breakingvacuum, transfer modules 410 e and 410 f are used to transfer the ASDworkpiece 11 to a film-forming module 430. Referring to FIGS. 2F, 3, and5B, in operation 316 a thermal process 36 is applied on ASD workpiece 11to form a metal-dielectric alloy 38. The thermal process 36 may berealized using a heat treatment, using an anneal chamber 440, such thatthe metal-containing layer 34 and a portion of the source/drain region26 combine into an alloy, wherein the resistance of the alloy is lowerthan the source/drain region 26 and higher than the metal-containinglayer 34. In alternative embodiments, the film-forming module 430 mayperform additional operations, such as optional operation 314 to apply aconductive capping layer.

Upon completion of process flow 300, the ASD workpiece 11 exits thecommon manufacturing platform 500 b via another front-end module 402 b,which may be identical to front-end module 402 a, although located atthe back end of the end-to-end arrangement of modules on commonmanufacturing platform 500 b. In the generally reverse process offront-end module 402 a, the ASD workpieces 11 are sequentiallytransferred by transfer module 410 f to a load lock where the controlledenvironment is removed and then into a cassette (not shown) on thefront-end module 402 b. The common manufacturing platform 500 b arrangedin a substantially mirrored fashion has the advantage of providingredundancy in the event a module has to go out of service, where thecommon manufacturing platform 500 b could still operate at a reducedcapacity.

In one embodiment, and as will be discussed in more detail below, thecommon manufacturing platform 500 b advantageously includes, and iscontrolled by, an “active interdiction control system.” The activeinterdiction control system includes a workpiece measurement regionwithin a transfer module 410 hosted on the common manufacturing platform500 b or an integrated metrology module (not shown) hosted on the commonmanufacturing platform 500 b. The workpiece measurement region may belocated in a dedicated area of the transfer module 410, as described inmore detail below. The workpiece measurement region or metrology modulemay include an inspection system for gathering measurement data. Asdescribed in more detail below, the inspection system may include atleast one optical source for directing an optical beam incident on ameasurement surface of the workpiece and at least one detector arrangedto receive an optical signal scattered from the measurement surface ofthe workpiece. The active interdiction control system may furtherinclude an intelligence system hosted on the common manufacturingplatform 500 b that is configured to gather data from the workpiecemeasurement region or metrology module and control the integratedsequence of processing steps executed on the common manufacturingplatform 500 b, such as process flow 300.

For active interdiction in accordance with embodiments of the invention,the workpiece measurement region or metrology module collects real timedata “on the fly” pertaining to attributes of features or layers on thesemiconductor workpiece (e.g., film or feature thickness, feature depth,surface roughness, pattern shift, voids or other defects, loss ofselectivity, lateral overgrowth, uniformity, etc.) and uses such realtime data to concurrently control integration operating variables in theintegrated processing modules hosted on the common manufacturingplatform 500 b. The data can be used in a feed-back and/or feed-forwardmanner to control operations performed on the workpiece in subsequentmodules and/or to control operations performed in prior modules on asubsequent workpiece, for example as will be explained below withreference to operations 322-348 of FIG. 3. In an embodiment, the commonmanufacturing platform 500 b includes a correction module, which may bea film-forming module 430, an etching module 420, or other type oftreatment module as appropriate for applying corrective action orremedial treatment to the ASD workpiece 11.

Unlike traditional metrology or process control, the workpiece does notleave the controlled environment to enter a stand-alone metrology toolthereby minimizing oxidation and defect generation, the measurements arenon-destructive such that no workpiece is sacrificed to obtain datathereby maximizing production output, and the data can be collected inreal time as part of the process flow to avoid negatively impactingproduction time and to enable in-process adjustments to the workpiece orto subsequent workpieces being sequentially processed on the commonmanufacturing platform 500 b. Additionally, the measurements are notperformed in the film-forming or etching modules, thereby avoidingissues when measurement devices are exposed to process fluids. Forexample, by incorporating workpiece measurement regions into thetransfer module, the data can be obtained as the workpiece is travelingbetween processing tools with little to no delay in the process flow,without exposure to process fluids, and without leaving the controlledenvironment, e.g., without breaking vacuum. While the “on the fly” datamay not be as accurate as the data obtained from traditional destructivemethods performed in stand-alone metrology tools, the nearlyinstantaneous feedback on the process flow and ability to make real-timeadjustment without interrupting the process flow or sacrificing yield ishighly beneficial for high-volume manufacturing.

With further reference to the process flow 300 of FIG. 3, the method mayinclude inspecting the workpiece, such as performing metrology, i.e.,obtaining measurement data, using the active interdiction control systemat any of various times throughout the integrated method, withoutleaving the controlled environment, e.g., without breaking vacuum.Inspection of the workpiece may include characterizing one or moreattributes of the workpiece and determining whether the attribute meetsa target condition. For example, the inspection may include obtainingmeasurement data related to an attribute and determining whether adefectivity, thickness, uniformity, and/or selectivity condition meets atarget for that condition. While the following discussion will focus onobtaining measurement data, it may be understood that other inspectiontechniques performed within the controlled environment of the commonmanufacturing platform are also within the scope of the invention.

The active interdiction control system may include a single metrologymodule or workpiece measurement region on the common manufacturingplatform 500 b or may include multiple metrology modules or workpiecemeasurement regions on the common manufacturing platform 500 b, as willbe discussed in more detail below. Each metrology operation is optional,as indicated by the phantom lines in FIG. 3, but may be advantageouslyperformed at one or more points in the process flow to ensure the ASDworkpiece 11 is within specification. In one embodiment, measurementdata is obtained after each step of the integrated sequence ofprocessing steps conducted on the common manufacturing platform. Themeasurement data may be used to repair the workpiece in a correctionmodule prior to leaving the common manufacturing platform, and/or may beused to alter parameters of the integrated sequence of processing stepsfor subsequent steps and/or for subsequent workpieces.

In broad terms, within the controlled environment, measurement data maybe obtained during the integrated sequence of processing steps relatedto the selective deposition of the additive material and, based on themeasurement data, a determination may be made whether defectivity,thickness, uniformity, and/or selectivity of the layer of additivematerial meets a target condition. When the defectivity, thickness,uniformity, and/or selectivity is determined to not meet the targetcondition, or an attribute of the workpiece is otherwise determined tobe non-conforming, the workpiece may be subjected to further processing.For example, the workpiece may be processed in a correction module onthe common manufacturing platform to remove, minimize, or compensate forthe non-conforming attribute prior to performing a next processing stepin the integrated sequence of processing steps. The corrective actionmay include etching surface on the workpiece, depositing furthermaterial on the workpiece, repairing a barrier layer on the workpiece,thermally treating the workpiece, or plasma treating the workpiece.

In one example, the corrective action may include removing the SAM whenthe non-conformity is based, at least in part, on incomplete coverage bythe SAM or when an amount of exposed area is greater than apredetermined exposed area threshold. In another example, the correctiveaction may include etching the workpiece when the non-conformity isbased, at least in part, on an inadequate amount of contaminationremoved from the workpiece based on a predetermined threshold. In yetanother example, the corrective action may include additional depositionof the metal-containing layer when the non-conformity is based, at leastin part, on an inadequate thickness of the metal-containing layer basedon a predetermined threshold. In a still further example, the correctiveaction may include providing additional thermal treatment when thenon-conformity is based, at least in part, on an inadequate amount ofmetal-dielectric alloy formation based on a predetermined threshold. Inanother example, the corrective action may include etching the workpiecewhen the non-conformity is based, at least in part, on a remainingadditive material on the non-target surface or a remainingself-assembled monolayer on the non-target surface being greater than apredetermined remaining thickness threshold. In yet another example, thecorrective action may include removing the remainder of themetal-containing layer when the non-conformity is based, at least inpart, on the metal-containing layer that did not react in the formationof the metal-dielectric alloy.

The correction modules may be different film-forming and etching modulesthat are designated as correction modules on the common manufacturingplatform or another type of treatment module integrated on the commonmanufacturing platform, such as a thermal annealing module, or may bethe same film-forming and etching modules used to selectively depositthe additive material and etch the film nuclei.

The process flow 300 of FIG. 3 will now be described in detail. Variousoptional operations are included in the description of the process flow300. The optional inspection or metrology operations are used tocharacterize attributes of the workpiece to determine, for example, whena target thickness is reached and/or if a non-conformality is present.Optional operations such as the self-assembled monolayer application orremoval are used to process a workpiece using the area selectivedeposition method instead of the patterned mask method. Further optionaloperations include etching a contact feature on a workpiece, removingcontamination from a workpiece, applying a conductive capping layer, andforming via structures and are selected according to the type ofworkpiece processing desired with the common manufacturing platform.

Operation 302 includes receiving a workpiece having or not having acontact feature into a common manufacturing platform. If the workpiecelacks a contact feature, the workpiece may be received with anadditional patterned mask layer. Similarly, a workpiece that is intendedto be processed using the patterned mask method may be received with anadditional patterned mask layer. Operation 322 includes optionallyperforming metrology to obtain measurement data related to attributes ofthe incoming workpiece, such as detecting the level of contaminationwithin the contact feature or measuring the thickness of the surface atthe bottom of the contact feature to determine the amount of oxide onthe surface, which measurement data may be used to adjust and/or controlprocess parameters of any one of operations 302-320.

Operation 304 includes optionally etching a contact feature on theworkpiece, if the workpiece is received without a contact feature.Operation 324 includes optionally performing metrology to obtainmeasurement data related to attributes of the etched contact feature,such as thickness, width, and/or profile (e.g., top-to-bottom widthdifferences). Thereafter, the measurement data may be used to adjustand/or control process parameters of any one of operations 304-320 totake corrective or remedial actions to address any non-conformingattributes.

Operation 306 includes optionally treating the workpiece to removecontamination. Operation 326 includes optionally performing metrology toobtain measurement data related to attributes of the workpiece followingtreatment, such as detecting the level of contamination within thecontact feature or on the workpiece. For example, the contamination maybe native oxide and/or etch residue, from the contact etching process,on the semiconductor contact surface 33. Methods such as high-resolutionoptical imaging and microscopy, hyperspectral (multi-spectral) imaging,interferometry, spectroscopy, Fourier transform Infrared spectroscopy(FTIR) reflectometry, scatterometry, spectroscopic ellipsometry,polarimetry, refractometers or non-optical imaging systems may be usedto obtain measurement data, such as oxide thickness, sidewall featureprofile, particles, and/or contamination on the bottom, sidewall, or topof the contact feature. Thereafter, the measurement data may be used toadjust and/or control process parameters of any one of operations306-320, including the contamination removal determination 328. Forexample, when the measurement data indicates that there is not adequatecontamination removal, such that the contamination removal determination328 is No, the workpiece may be subjected to repeating operation 306.For example, the workpiece may be processed through an etching module toremove the remaining contamination and/or modify the contact featurethickness, width, and/or profile using the metrology data from operation324. When the measurement data indicates that there is adequatecontamination removal, such that the contamination removal determination328 is Yes, the workpiece advances to the next operation (e.g.,operation 308 or 310).

Operation 308 includes optionally depositing a self-assembled monolayer(SAM) on the workpiece, if the workpiece is being processed under theASD method. Operation 330 includes optionally performing metrology toobtain measurement data related to attributes of the deposited SAM, suchas thickness or density using methods such as high-resolution opticalimaging and microscopy, hyperspectral (multi-spectral) imaging,interferometry, spectroscopy, Fourier transform Infrared spectroscopy(FTIR) reflectometry, scatterometry, spectroscopic ellipsometry,polarimetry, or refractometers. For example, the imaging techniques maybe used to assess the SAM attributes based on historical data or modelsused by the active interdiction control system 622 to determine thethickness and density of the SAM. Thereafter, the measurement data maybe used to adjust and/or control process parameters of any one ofoperations 308-320 or take corrective or remedial actions to insureproper sufficient selectivity between the SAM 44, contact dielectricfilm 33, and the semiconductor contact surface 30. In one embodiment,one or more of the aforementioned measurement techniques may be used toobtain the attributes of the SAM 44, such as the thickness and/ordensity of the SAM 44. The thickness measurement may provide anindication of the orientation and/or alignment of the SAM molecules todetect whether the SAM molecules are leaning over the contact featurecausing a partial masking of the contact feature, such that thesubsequent metal deposition at the bottom of the contact feature isnon-uniform or doesn't cover the entirety of the exposed semiconductorcontact surface 30. Another concern with the SAM 44 relates to densitywhich provides an indication of whether enough SAM is deposited on thecontact dielectric film 30 to sufficiently mask, or prevent metal frombeing deposited on, the contact dielectric film 30 during subsequentmetal deposition processes. Operation 350 includes using the metrologydata from Operation 308 to determine whether the SAM 44 adequatelycovers the contact dielectric film 30, while allowing the semiconductorcontact surface 33 to be SAM free or remain relatively SAM free for thepurposes of forming an electrically viable metal contact. For example,if the metrology measurement indicates a relatively lower density ofSAM, based on a predetermined threshold or historical performance, ofSAM is present on the workpiece, and may trigger a remedial orcorrective action, within the controlled environment, to address theincomplete SAM coverage of the contact dielectric film 30 and/or thegate structure 16. In this instance, additional SAM material may beapplied to the workpiece using film-forming module 430 or thelow-density SAM may be removed by one of the etching modules 420 andanother SAM is applied to replace the low-density SAM. Alternatively, ametrology measurement indicating a relatively higher density of SAM ison the workpiece, this may mean too much SAM was applied where it's notintended to cover (e.g., semiconductor contact surface 33) and triggersa remedial action. In one embodiment, the remedial action may be toremove the high-density SAM and apply another SAM to insure adequateselectivity between the SAM 44 and the dielectric contact film 30, suchthat the SAM layer prevents metal deposition on the dielectric contactfilm 30, and allows metal deposition on the semiconductor contactsurface 33 during subsequent processing.

Operation 310 includes depositing a metal-containing layer on theworkpiece. When following the pattern mask method, the metal containinglayer is deposited on the entire workpiece. Alternatively, under the ASDmethod, the metal-containing layer is deposited primarily within thecontact feature on the workpiece. Operation 332 includes optionallyperforming metrology to obtain measurement data related to attributes ofthe metal-containing layer following treatment, such as thickness,resistance, uniformity, or conformality. Thereafter, the measurementdata may be used to adjust and/or control process parameters of any oneof operations 310-320, including the adequate metal depositiondetermination 334. For example, when the measure data indicates thatthere is not adequate metal deposition, such that the metal depositiondetermination 334 is No, the workpiece may be subjected to repeatingoperation 310 or removing at least a portion of the metal deposition toachieve an adequate amount (e.g., thickness) of metal deposition. Whenthe measurement data indicates that there is adequate metal deposition,such that the metal deposition determination 334 is Yes, the workpieceadvances to operation 312.

Operation 312 includes optionally removing SAM from the workpiece, ifthe workpiece is being processed under the ASD method or the patternmask 32 under the mask layer embodiment. Operation 336 includesoptionally performing metrology to obtain measurement data related toattributes of the workpiece, such as thickness or thicknessnon-uniformity, to assess whether the SAM layer or the pattern masklayer has been sufficiently removed from the workpiece. Thereafter, themeasurement data may be used to adjust and/or control process parametersof any one of operations 312-320. For example, operation 312 may berepeated until the workpiece is adequately cleared of the aforementionedlayers.

Operation 316 includes reacting a portion the metal-containing layerwith a portion of the contact feature to form a metal-dielectric alloyon the workpiece. The reaction may be achieved, for example, byemploying a heat treatment through a thermal process. Operation 340includes optionally performing metrology to obtain measurement datarelated to attributes of the metal-dielectric alloy following formation,such resistance, with methods such as a film resistivity metrologysystem. Thereafter, the measurement data may be used to adjust and/orcontrol process parameters of any one of operations 316-320, includingthe adequate metal-dielectric alloy determination 342. For example, whenthe measure data indicates that there is not adequate metal-dielectricalloy formed, such that the metal-dielectric alloy determination 342 isNo, the workpiece may be subjected to repeating operation 316. When themeasurement data indicates that there is adequate metal-dielectric alloyformed either by measuring sheet or contact resistance, thickness of theremaining unalloyed metal and/or alloyed metal, surface roughness orreflectivity of the exposed unalloyed or alloyed metal surface, suchthat the metal-dielectric alloy determination 342 is Yes, the workpieceadvances to operation 318. If the metal-dielectric alloy determination342 is No, the workpiece may undergo corrective action by annealing theworkpiece until measurement data indicates that there is adequatemetal-dielectric alloy formed. The anneal time and temperature may beoptimized to a different time or temperature than the original annealingconditions, if needed. The time and temperature optimization may beimplemented using models based on historical data or simulation ofcontact resistance for the gate structure 16 stored in the activeinterdiction control system 622.

Operation 318 includes optionally removing any unalloyedmetal-containing layer to expose the metal-dielectric alloy on theworkpiece, if an unalloyed metal-containing layer is present. Inaddition, unalloyed metal-containing layer not adjacent to themetal-dielectric alloy may also be removed. Further, when following thepattern mask method, removal may also include removing the patternedmask. Operation 344 includes optionally performing metrology to obtainmeasurement data related to attributes of the unalloyed metal-containinglayer, such as resistance, thickness, and/or surface reflectivity.Thereafter, the measurement data may be used to adjust and/or controlprocess parameters of any one of operations 318, 320, including theadequate layer removal determination 346. For example, when the measuredata indicates that there is not adequate metal-containing layerremoval, such that the adequate layer removal determination 346 is No,the workpiece may be subjected to repeating operation 318. When themeasurement data indicates that there is adequate metal-containing layerremoval, such that the adequate layer removal determination 346 is Yes,the workpiece advances to operation 320.

Operation 314 includes optionally depositing a conductive capping layeron the workpiece. The conductive capping layer may be deposited acrossthe entire workpiece or within or proximate to the contact feature,wherein the conductive capping layer (e.g., Ti, TiN) can be differentfrom the metal layer (e.g., Co) applied in operation 310. Operation 338includes optionally performing metrology to obtain measurement datarelated to attributes of the conductive capping layer, such asthickness. Thereafter, the measurement data may be used to adjust and/orcontrol process parameters of any one of operations 314-320.

Operation 320 includes optionally adding via structures on the workpieceor removing the workpiece from the controlled environment to form thevia structures using additional stand-alone equipment. Operation 348includes optionally performing metrology to obtain measurement datarelated to attributes of the via structures, such as thickness, width,and profile of the via. Thereafter, the measurement data may be used toadjust and/or control process parameters of operation 320. Completion ofoperation 320 denotes that the workpiece may exit the commonmanufacturing platform.

Process parameters, as referred to above, may include any operatingvariable within a processing module, such as but not limited to: gasflow rates; compositions of etchants, deposition reactants, purge gases,etc.; chamber pressure; temperature; electrode spacing; power; etc. Theintelligence system of the active interdiction control system isconfigured to gather measurement data from the inspection system andcontrol the integrated sequence of processing steps executed on thecommon manufacturing platform, for example, by making in situadjustments to processing parameters in subsequent processing modulesfor the workpiece in process, or by changing process parameters in oneor more processing modules for subsequent workpieces. Thus, the obtainedmeasurement data may be used to identify a needed repair to theworkpiece during the integrated sequence of processing steps to avoidhaving to scrap the workpiece, and/or to adjust processing parametersfor the integrated sequence of processing steps for steps performed onthe same workpiece after the measurement data is obtained or forprocessing subsequent workpieces to reduce occurrences of the targetconditions not being met for the subsequent workpieces.

FIGS. 4A, 4B, 5A, and 5B illustrate various embodiments of the inventionthrough multiple configurations of a common manufacturing platform.Certain modules of the common manufacturing platform, such as theannealing module, are depicted in only one embodiment for clarity ofexplanation and not as a limitation of use of the module.

With further reference to FIG. 4A, a common manufacturing platform forprocessing a pattern mask workpiece 10 is presented. The commonmanufacturing platform 400 a generally includes at least one front-endmodule 402, for example one at each end of the common manufacturingplatform 400 a as shown for transferring pattern mask workpieces 10 intoand out of the common manufacturing platform 400 a. Common manufacturingplatform 400 a includes a plurality of transfer modules 410 fortransferring workpieces into and out of a plurality of processingmodules hosted on the common manufacturing platform 400 a. The pluralityof processing modules includes one or more dry etching modules 420, suchas one or more dry etching chambers, wet etching chambers and/orChemical Oxide Removal (COR) chambers (dry-chemical, non-plasma etch),and one or more film-forming modules 430, such as one or more depositionchambers to apply different films (e.g., dielectric, metal, SAM) on theworkpiece. In the FIG. 4A embodiment, the dry etching modules 420 may beused to perform operation 306 in which the semiconductor contact surface30 is treated to remove contamination using a non-plasma etchingprocess, which relies on the reactivity of the process chemistry toisotopically (non-directional) etch the exposed semiconductor contactsurface 30. In contrast, plasma-based etching relies on a combination ofchemical reactivity and plasma to anistropically (directional) etch theworkpiece, in which plasma is electrically-biased to direct chargedparticles (e.g., electrons) or molecules (e.g., ions) towards or awayfrom the workpiece using a biased workpiece holder or electrode disposedwithin the vacuum environment. In most instances, the dry etching module420 does include a grounded workpiece holder and does not include abiased workpiece holder or electrode within the vacuum environment. Thefilm-forming modules 430 may be used to perform operations 310 or 314,in which a metal layer is deposited using known metal depositiontechniques (e.g., CVD, PECVD, ALD, PEALD, or PVD). The film-formingmodules 430 presented in FIGS. 4A-4B, 5A-5B are not required to be thesame types of chambers and may vary depending on the operation intendedto be performed within the framework of FIG. 3. For example, in the FIG.4A embodiment, one of the film-forming modules 430 may deposit the metalcontact layer (e.g., Co) and the second film-forming module 430 mayapply the conductive capping layer (e.g., Ti), as described inoperations 310 and 314, used to anneal metal contact layer (e.g.,operation 316), or used to apply the SAM (e.g., operation 308). Any ofthe processing modules may serve as a correction module for repairingthe workpiece, or additional processing modules may be added forperforming remedial or corrective action.

In one example, a single pattern mask workpiece 10 is processed downline 450 from front end to back end or transferred between modules asneeded based on module capability or availability. Thus, thecontamination removal operation 306, metal-containing layer depositionoperation 310, and conductive capping layer deposition operation 314 maybe performed down line 450 to prepare a gate contact for the workpiece,then the contamination removal operation 306, metal-containing layerdeposition operation 310, and conductive capping layer depositionoperation 314 may be performed down line 460 as needed by a subsequentworkpiece or to take corrective actions on workpiece 10, if needed, asnoted in operations 328, 334, 342. Metal-dielectric alloy formationoperation 316 may occur in one of film-forming modules 430. In anotherembodiment, another etching module 420 (e.g., plasma-based etchingmodule) may be added to the common manufacturing platform to perform thecontact etch operation 304.

In another example, the two lines 450, 460 operate independently toprocess two pattern mask workpieces 10 concurrently, either temporallyin-phase or temporally off-set, each progressing down one of the lines450 or 460 from front end to back end, then transferred back to thefront end and each processed again down the same line 450 or 460 foradditional repetitions, if needed for corrective or remedial actions.Thus, the contamination removal operation 306, metal-containing layerdeposition operation 310, and conductive capping layer depositionoperation 314 are performed down each line 450 and 460 to prepare a gatecontact for the workpiece. Metal-dielectric alloy formation operation316 may occur in one of film-forming modules 430. This example has theadvantage of providing redundancy in the event a module has to go out ofservice, where the common manufacturing platform 400 a can still operateat 50% capacity.

A cleaning etch or repair process can be performed at the end of thefirst or a subsequent pass before transferring the pattern maskworkpiece 10 back to the front end in order to clean or repair theworkpiece before repeating the operations or before exiting the commonmanufacturing platform 400 a. A correction module may be added in thelines 450, 460 for performing remedial or corrective actions (328, 334,342).

FIG. 4B expands on the common manufacturing platform 400 a as presentedin FIG. 4A by the inclusion one or more annealing modules 440 and atleast one additional transfer module 410 for transferring the patternmask workpiece 10 between modules while maintaining a controlledenvironment throughout the integrated process flow, thereby depictingthe common manufacturing platform 400 b. The annealing module 440carries out the metal-dielectric alloy formation operation 316 which mayotherwise occur in one of film-forming modules 430 (e.g., dielectric ormetal). For example, the annealing module 440 may include a heatingelement (e.g., resistive element or radiation source) and a temperaturecontrol system to control temperature across the workpiece.Additionally, placement of the annealing modules 440 is such that thecontact feature formation operation 304, metal-dielectric alloyformation operation 316 is performed down each line 450 and 460,subsequent to contamination removal operation 306 and metal-containinglayer deposition operation 310, and may proceed to the conductivecapping layer deposition operation 314.

In an additional embodiment as presented in FIG. 5A, commonmanufacturing platform 500 a is configured to process area selectivedeposition workpiece (ASD) workpiece 11. The common manufacturingplatform 500 a generally includes at least one front-end module 402, forexample one at each end of the common manufacturing platform 500 a asshown for transferring ASD workpieces 11 into and out of the commonmanufacturing platform 500 a. Common manufacturing platform 500 aincludes a plurality of transfer modules 410 for transferring workpiecesinto and out of a plurality of processing modules hosted on the commonmanufacturing platform 500 a. The plurality of processing modulesincludes one or more etching modules 420, such as one or more dryetching chambers, wet etching chambers and/or COR chambers, and one ormore film-forming modules 430, such as one or more deposition tools. Theetching modules 420 may be used to perform operations 304, 306, 312, or318. The film-forming modules 430 may be used to perform operations 308,310, or 314. Any of the processing modules may serve as a correctionmodule for repairing the workpiece, or additional processing modules maybe added for performing corrective actions. As shown, the plurality ofprocessing modules generally forms two lines 450, 460 from front end toback end, one line 450 down one side of a row of transfer modules 410and the other line 460 down the other side of the row of transfermodules 410.

In one example, a single ASD workpiece 11 is processed down line 450from front end to back end, then, if needed to complete gate contactformation transferred back to the front end and processed again downline 460. Thus, the contamination removal operation 306, self-assembledmonolayer (SAM) application operation 308, metal-containing layerdeposition operation 310, SAM removal operation 312, and conductivecapping layer deposition operation 314 are performed on commonmanufacturing platform 500 a. Metal-dielectric alloy formation operation316 may occur in one of film-forming modules 430 and/or anneal module(not shown) incorporated into common manufacturing platform 500 a.

FIG. 5B expands on the common manufacturing platform 500 a as presentedin FIG. 5A by the inclusion of additional etching modules 420 and atleast one additional transfer module 410 for transferring the ASDworkpiece 11 between modules while maintaining a controlled environmentthroughout the integrated process flow, thereby depicting the commonmanufacturing platform 500 b. The additional etching module 420 carriesout the contact feature formation operation 304 if ASD workpiece 11 isintroduced into the common manufacturing platform 500 b without acontact feature. Additionally, placement of the etching module 420 issuch that the contact feature formation operation 304 is performed downeach line 450 and 460, before any subsequent operation.

In a further embodiment, the common manufacturing platform includes atleast one workpiece measurement region, which is located within adedicated area of the at least one transfer module or within a metrologymodule hosted on the common manufacturing platform within the controlledenvironment, for obtaining measurement data related to one or moreattributes of the workpiece. In one embodiment, the common manufacturingplatform includes at least one correction module for performing a repairof the workpiece, such as repairing a SAM.

As may be appreciated by persons having ordinary skill in the art, thenumber and positioning of processing modules on the common manufacturingplatform as well as metrology operations may be selected based on theprocessing time in the different modules needed to carry out theoperations in the different modules to provide essentially continuousprocess flow through the common manufacturing platform and thus goodthroughput matching.

As disclosed herein the term “metrology module” or “measurement module”refers to a module/system/sensor/tool that can make measurements on aworkpiece to detect or determine various non-conformities or variationson the workpiece, such as parametric variations, or to detect ordetermine defects on the workpiece, such as a contamination of somekind. As used herein, the term “inspection system” will generally referto the tool or system of a measurement process or module that measuresand collects data or signals associated with the measurement. Themeasurement modules will make measurements and provide data for use inthe processing platform as disclosed further herein. The terms“metrology module” and “measurement module” will be used interchangeablyherein, and generally refer to measurement or metrology or sensing toolsused to detect and measure attributes of a workpiece that are indicativeof the processing of the workpiece and the layers and devices beingformed thereon.

To move workpieces between the various processing modules, the commonmanufacturing platform will generally incorporate one or more workpiecetransfer modules that are hosted on the common manufacturing platformand are configured for the movement of the workpiece between theprocessing modules and the measurement module(s). A measurement modulemight be coupled with the workpiece transfer module similar to aprocessing module. In some embodiments of the invention, as disclosedherein, a measurement module or the inspection system associatedtherewith is incorporated with or inside a transfer module to providefor measurement or metrology as the workpiece is moved betweenprocessing modules. For example, a measurement module, or a portionthereof, might be positioned inside an internal space of the transfermodule. Herein, the combination transfer and measurement apparatus willbe referred to as a transfer measurement module (“TMM”).

In one embodiment, the common manufacturing platform including bothprocessing chambers and measurement modules is actively controlled by asystem that processes the measured data associated with an attribute onthe workpiece and uses the measured data for controlling movement andprocessing of the workpiece in a processing sequence. In accordance withembodiments of the invention, the control system uses measured data andother data to perform corrective processing based in part on themeasured data to provide active interdiction of the processing sequenceto correct non-conformities or defects. More specifically, an activeinterdiction control system is hosted on the common manufacturingplatform and is configured to perform corrective processing based inpart on the measured data, wherein the corrective processing of theworkpiece might be performed in the processing modules of the platformthat are upstream or downstream in the process sequence to addresssituations where non-conformities or defects are detected. In anembodiment of the invention, the workpiece is maintained in a controlledenvironment, such as under vacuum, for example. That is, on the commonmanufacturing platform, the processing modules and the measurementmodule operate in a controlled environment, and the workpiece transfermodule transfers the workpiece between the plurality of processingmodules in the processing sequence and one or more measurement moduleswithout leaving the controlled environment.

As used herein, the term “active interdiction” refers generally to thecontrol system as implemented for capturing measurement/metrology datain real time with respect to various fabrication processes to obtaindata on workpiece attributes and thereby detect non-conformities ordefects and the corrective aspects of the control to correct orameliorate the non-conformities or defects. The active interdictioncontrol system uses the data for correction and amelioration of variousnon-conformities in the semiconductor fabrication process by activelyvarying the processing sequence and/or the operation of modules thatperform process steps. Thus, the active interdiction control system alsointerfaces with one or more transfer modules (e.g., 410) used to moveworkpieces through the process. The active interdiction control system(622 in FIGS. 6 and 722 in FIGS. 7A-7D, as further described below)coordinates the data collection and data analysis and detection ofnon-conformities with the fabrication process and further directs theactions of multiple processing modules so as to address thenon-conformities or defects that are detected. The active interdictioncontrol system is implemented generally by one or more computer orcomputing devices as described herein that operate a specially designedsets of programs such as deep learning programs or autonomous learningcomponents referred to collectively herein as active interdictioncomponents. As may be appreciated, the active interdiction controlsystem may incorporate multiple programs/components to coordinate thedata collection from various measurement modules and the subsequentanalysis. The active interdiction control system interfaces with themultiple processing modules in the common manufacturing platform inorder to address various measured non-conformities/defects to correct orameliorate the non-conformities/defects. The active interdiction controlsystem will thereby control one or more of the processing modules andthe processing sequence to achieve the desired results of the invention,which may be referred to as the target conditions or predeterminedthresholds.

The active interdiction control system also controls the transfermodules in order to move the workpieces to upstream and/or downstreamprocessing modules when non-conformities/defects are detected. That is,depending upon what is detected, the system of the invention may movethe workpiece further along in the processing sequence, or may directthe workpiece to a correction module or to an upstream processing moduleto correct or otherwise address a detected non-conformity or defect. Assuch, feedforward and feedback mechanisms are provided through thetransfer modules to provide the active interdiction of the invention.Furthermore, the processing sequence might be affected upstream ordownstream for future workpieces.

The active interdiction features of the invention improve performance,yield, throughput, and flexibility of the manufacturing process usingrun-to-run, wafer-to-wafer, within the wafer and real-time processcontrol using collected measurement/metrology data. The measured data iscollected, in real time during the processing, without removing theworkpiece/substrate/wafer from the controlled processing environment. Inaccordance with one feature of the invention, in a common manufacturingplatform, the measurement data may be captured while the substrateremains in a controlled environment, such as under vacuum, for example.That is, the workpiece transfer module(s) are configured fortransferring the workpiece between the plurality of processing modulesand the measurement modules without leaving the controlled environment.The active interdiction control can provide a multivariate, model-basedsystem that is developed in conjunction with feed-forward and feedbackmechanisms to automatically determine the optimal recipe for eachworkpiece based on both incoming workpieces and module or tool stateproperties. The active interdiction control system uses fabricationmeasurement data, process models and sophisticated control algorithms toprovide dynamic fine-tuning of intermediate process targets that enhancefinal device targets. The interdiction system enables scalable controlsolutions across a single chamber, a process tool, multi-tools, aprocess module and multi-process modules on a common manufacturingplatform using similar building blocks, concepts, and algorithms asdescribed herein.

FIG. 6 is a schematic diagram of another system for implementing anembodiment of the present invention on a common manufacturing platform600. The platform 600 incorporates a plurality of processingmodules/systems for performing integrated workpiece processing andworkpiece measurement/metrology under the control of an activeinterdiction control system 622 according to embodiments of theinvention. FIG. 6 illustrates an embodiment of the invention wherein oneor more workpiece measurement modules are coupled together with one ormore workpiece processing modules through one or more transfer modules.In that way, in accordance with features of the invention, an inspectionof the workpiece may be made to provide the measurement data associatedwith an attribute of the workpiece, such as regarding materialproperties of the workpiece and the various thin films, layers andfeatures that are formed on the workpiece while the workpiece remainswithin the common manufacturing platform. As discussed herein,measurements and analysis may be made immediately upon completion ofprocessing steps, such as an etch or deposition step, and themeasurement data gathered may be analyzed and then used within thecommon manufacturing platform to address any measurements or featuresthat are out of specification or non-conformal or represent a defectwith respect to the workpiece design parameters. The workpiece does notneed to be removed from the common manufacturing platform to takecorrective action, but rather, can remain under the controlledenvironment.

Referring to FIG. 6, common manufacturing platform 600 isdiagrammatically illustrated. Platform 600 includes a front-end module602 for introducing one or more workpieces into the manufacturingplatform. As is known, the front-end module (FEM) may incorporate one ormore cassettes holding the workpieces. The front-end module may bemaintained at atmospheric pressure but purged with an inert gas toprovide a clean environment. One or more workpieces may then betransferred into a transfer module 610, such as through one or moreload-lock chambers (not shown) as discussed herein. The transfer modulesof FIG. 6 are transfer measurement modules (TMM) that includemeasurement tools or inspection systems integrated therein for capturingdata from a workpiece. Multiple TMM's 610 may be interfaced forproviding movement of a workpiece through a desired sequence. Thetransfer measurement modules 610 are coupled with a plurality ofprocessing modules. Such processing modules may provide variousdifferent processing steps or functions and may include one or more etchmodules 630, one or more film-forming modules 620, one or more cleaningmodules 640, and one or more measurement modules 612 a, 612 b, 612 c,612 d. In accordance with embodiments of the invention as disclosedfurther herein, measurement modules may be accessed through the transfermodules 610 before or after each processing step. In one embodiment, themeasurement modules, such as 612 c, 612 d, are located outside of thetransfer modules 610 and are accessed to insert and receive workpiecessimilar to the various processing modules and may be referred to hereinas metrology modules that reside within the controlled environment ofthe common manufacturing platform 600. Alternatively, measurementmodules or at least a portion thereof, such as modules 612 a, 612 b, maybe located in a respective transfer module. More specifically, all or aportion of a measurement module 612 a, 612 b is located in a transfermodule 610 to define a measurement region therein where a workpiecemight be positioned for measurement during a transfer process. Themeasurement region is located in a dedicated area of the transfer module610 and is accessible by the transfer mechanism of the transfer modulefor positioning the workpiece. As noted, this makes the transfer moduleessentially a transfer measurement module (TMM) as discussed herein.

Generally, the transfer module defines a chamber therein that houses atransfer robot that is capable of moving workpieces, under vacuum,through various gate valves and access or transfer ports into variousprocessing modules or measurement modules. By maintaining themeasurement modules on the common manufacturing platform 600, they arereadily accessed, such as between one or more of the processing steps toprovide the necessary measured analytical data on-the-fly that will beused to address any workpiece out of specification or otherwisenon-conformal with the workpiece design plans for a particular workpieceor to address detectable defects. In that way, real time data isprovided to allow a fabricator to recognize problems early in the systemso that remedial action may be taken in the current processing sequence,such as in a following processing step, in a previous processing step,and/or in a future processing step depending upon the captured data andthe detected non-conformities or defects. In that way, productivity andefficiency may be increased, process monitoring overhead may be reduced,and wasted product, in the form of rejected or ejected workpieces may bereduced. This all provides a significant cost savings to a fabricator ordevice maker.

As noted, in one embodiment of the invention that incorporates theactive interdiction control system 622, one or more measurement modulesare hosted on a common manufacturing platform with processing modulesfor providing measured data regarding an attribute of the workpiece. Thedata is used by the active interdiction control system 622 for detectingnon-conformities and for performing corrective processing of theworkpiece when non-conformities are detected. The corrective processingis performed upstream and/or downstream in the process sequence whennon-conformities are detected.

Referring to FIG. 7A, an exemplary common manufacturing platform 700suitable for practicing a method of ASD is illustrated. The commonmanufacturing platform 700 incorporates multiple modules and processingtools for the processing of semiconductor substrates for the fabricationof integrated circuits and other devices. The common manufacturingplatform 700 incorporates one or more metrology/measurement modules thatare incorporated within the common manufacturing platform 700 along withthe processing modules. For example, the platform 700 may incorporate aplurality of processing modules that are coupled to a transfer module asshown. In some embodiments, a measurement module or tool is alsopositioned, at least partially, inside the transfer module. As such, aworkpiece may be processed and then transferred immediately to ameasurement module in order to collect various fabrication dataassociated with attributes of the workpiece that is further processed bythe active interdiction control system. The active interdiction controlsystem gathers data from the processing and measurement modules andcontrols a process sequence that is executed on the common manufacturingplatform through the selective movement of the workpiece and control ofone or more of the plurality of processing modules. Furthermore, theprocessing system of platform 700 may transfer a workpiece inside thechamber of the transfer module and between the various processingmodules and the measurement/metrology modules without leaving thecontrolled environment of the common manufacturing platform 700. Theactive interdiction control system controls the sequential process flowthrough the various processing modules utilizing information that isderived from workpiece measurements obtained from the one or moremeasurement modules. Furthermore, the active interdiction control systemincorporates processing modules in-situ measurements and data to controlthe sequential process flow through the platform 700. The on-substratemeasurement data obtained in the controlled environment may be utilizedalone or in combination with the in-situ processing module measurementdata for process flow control and improvement of the process inaccordance with the invention.

Turning again to FIG. 7A, common manufacturing platform 700 contains afront-end module 702 to introduce workpieces into the controlledenvironment. The exemplary platform 700 includes a plurality ofprocessing modules 720 a-720 d and one or more measurement/metrologymodules 716 organized around the periphery of a workpiece transfermodule 710. Common manufacturing platform 700 includes cassette modules704 and load-lock chambers 708 coupled to front-end module 702. Thefront-end module 702 is generally maintained at atmospheric pressure,but a clean environment may be provided by purging with an inert gas.Load-lock chambers 708 are coupled to the centralized workpiece transfermodule 710 and may be used for transferring workpieces from thefront-end module 702 to the workpiece transfer module 710 for processingin the controlled environment of the platform 700.

The workpiece transfer module 710 may be maintained at a very low basepressure (e.g., 5×10-8 Torr, or lower) or constantly purged with aninert gas. In accordance with the invention, a measurement/metrologymodule 716 may be operated under atmospheric pressure or operated undervacuum conditions. In accordance with one embodiment, the measurementmodule 716 is kept at vacuum conditions and the wafer is processed inplatform 700 and measured without leaving vacuum. As disclosed furtherherein, the metrology module may include one or more inspection systemsor analytical tools that are capable of measuring one or more materialproperties or attributes of a workpiece and/or of the thin films andlayers deposited on the workpiece or the devices formed on theworkpiece. As used herein, the term “attribute” is used to indicate ameasurable feature or property of a workpiece, layer on a workpiece,feature or device on a workpiece, etc. that is reflective of theprocessing quality of the processing sequence. The measured dataassociated with an attribute is then used to adjust the process sequenceby analyzing the measured data along with other in-situ processing datathrough the active interdiction control system. For example, themeasured attribute data reflects non-conformities or defects on theworkpiece for providing corrective processing.

FIG. 7A illustrates essentially a single measurement module 716.However, the particular common manufacturing platform 700 mayincorporate a plurality of such measurement modules that areincorporated around one or more workpiece transfer systems, such as theworkpiece transfer module 710. Such measurement modules 716 may bestand-alone modules that are accessed through the transfer module 710like a processing module. Such stand-alone modules will generallyincorporate inspection systems therein that are configured to engage aworkpiece that is positioned in a measurement region of the module andto measure data associated with an attribute of the workpiece.

In an alternative embodiment of the invention, a measurement modulemight be implemented in a measurement region located within a dedicatedarea of an internal space of the transfer chamber defined by thetransfer module 710. Still further, a measurement module might beincorporated wherein at least a portion of the measurement module ispositioned inside of an internal space of a workpiece transfer module,and other components of the measurement module or the specificinspection system of the measurement module are incorporated outside ofthe workpiece transfer module and interfaced through an aperture orwindow into a dedicated area of the internal space that forms themeasurement region in which a workpiece is located or through which aworkpiece will pass.

The measurement modules of the inventive system and platform include oneor more inspection systems that are operable for measuring dataassociated with an attribute of the workpiece. Such data may beassociated with one or more attributes that reflect the quality of theprocessing sequence and the quality of the layers and features anddevices that are being formed on a workpiece. The collected measurementdata is then analyzed, along with processing module data, by an activeinterdiction control system for detecting various non-conformitiesand/or defects on the workpiece or workpiece layers/features. The systemthen provides for corrective processing of the workpiece, such as inupstream or downstream processing modules in the process sequence toameliorate/correct the non-conformities or defects and improve theoverall process.

In accordance with embodiments of the invention, the measurements takenby the measurement module or inspection systems thereof and the datagenerated is associated with one or more attributes of a workpiece. Forexample, the attribute measured may include, for example, on or more of:a layer thickness, a layer conformality, a layer coverage, a layerprofile of a layer on the workpiece, an edge placement location, an edgeplacement error (EPE) for certain features, a critical dimension (CD), ablock critical dimension (CD), a grid critical dimension (CD), a linewidth roughness (LWR), a line edge roughness (LER), a block LWR, a gridLWR, a property relating to selective deposition process(es), a propertyrelating to selective etch process(es), a physical property, an opticalproperty, an electrical property, a refractive index, a resistance, acurrent, a voltage, a temperature, a mass, a velocity, an acceleration,or some combination thereof associated with the fabricated electronicdevices on the workpiece. The list of measured attributes for generatingmeasurement data for the invention is not limited and could includeother attribute data that might be used for processing a workpiece andfabricating devices.

As further discussed herein, the measurement modules and/or inspectionssystems used for providing attribute data may implement a number oftools and methods for measurement for providing the measurement andmetrology of the invention. The measurement modules and/or inspectionssystems may include optical methods, or non-optical methods. Opticalmethods can include high-resolution optical imaging and microscopy(e.g., bright-field, dark-field, coherent/incoherent/partially coherent,polarized, Nomarski, etc.), hyperspectral (multi-spectral) imaging,interferometry (e.g., phase shifting, phase modulation, differentialinterference contrast, heterodyne, Fourier transform, frequencymodulation, etc.), spectroscopy (e.g., optical emission, lightabsorption, various wavelength ranges, various spectral resolutions,etc.), Fourier transform Infrared spectroscopy (FTIR) reflectometry,scatterometry, spectroscopic ellipsometry, polarimetry, refractometers,etc. Non-optical methods can include electronic methods (e.g., RF,microwave, etc.), acoustic methods, photo-acoustic methods, massspectroscopy, residual gas analyzers, scanning electron microscopy(SEM), transmission electron microscopy (TEM), atomic force microscopy(AFM), energy dispersive x-ray spectroscopy (EDS), x-ray photo-emissionspectroscopy (XPS), etc. For example, the inspection system used formeasuring data that is associated with an attribute of the workpiece mayuse one or more of the following techniques or devices: optical thinfilm measurement, such as reflectometry, interferometry, scatterometry,profilometry, ellipsometry; X-Ray measurements, such as X-rayphoto-emission spectroscopy (XPS), X-Ray fluorescence (XRF), X-Raydiffraction (XRD), X-Ray reflectometry (XRR); ion scatteringmeasurements, such as ion scattering spectroscopy, low energy ionscattering (LEIS) spectroscopy, auger electron spectroscopy, secondaryion mass spectroscopy, reflection absorption IR spectroscopy, electronbeam inspection, particle inspection, particle counting devices andinspection, optical inspection, dopant concentration metrology, filmresistivity metrology, such as a 4-point probe, eddy currentmeasurements; a micro-balance, an accelerometer measurement, a voltageprobe, a current probe, a temperature probe for thermal measurements, ora strain gauge. The list of measurement techniques or devices forgenerating measurement data for the invention is not limited and couldinclude other techniques or devices that might be used for obtaining theuseful data for processing a workpiece and fabricating devices inaccordance with the invention.

The measurement modules and/or inspection systems may take measurementson various substrate or workpiece structures passed through theprocessing system including either product workpieces, or non-productsubstrates, i.e., a monitoring substrate. On product workpieces,measurements can be performed on designated target structures, bothdevice-like structures and device-unlike structures, on specified deviceareas, or on arbitrary areas. The measurements may also be performed ontest structures created on the workpiece, that might include pitchstructures, area structures, density structures, etc.

Referring again to FIG. 7A, coupled to the transfer chamber 710 are aplurality of processing modules 720 a-720 d that are configured forprocessing substrates, such as semiconductor or silicon (Si) workpieces.The Si workpieces can, for example, have a diameter of 150 mm, 200 mm,300 mm, 450 mm, or larger than 450 mm. The various processing modulesand measurement modules all interface with the workpiece transfer module710 through appropriate gate access ports with valves G, for example.According to one embodiment of the invention disclosed herein, the firstprocessing module 720 a might perform a treatment process on aworkpiece, and the second processing module 720 b might form aself-aligned monolayer (SAM) on a workpiece. The third processing module720 c may deposit a film on a workpiece by a suitable selectivedeposition process, and the fourth processing module 720 d mayselectively etch or clean a workpiece.

The transfer module 710 is configured for transferring workpiecesbetween any of the processing modules 720 a-720 d and then into themetrology module 716 either before or after a particular processingstep. FIG. 7A further shows the gate valves G that provide isolation atthe access ports between adjacent processing chambers/tool components.As depicted in the embodiment of FIG. 7A, the processing modules 720a-720 d and the metrology module 716 may be directly coupled to thetransfer chamber 710 by the gate valves G and such direct coupling cangreatly improve substrate throughput in accordance with the invention.

The common manufacturing platform 700 includes one or more controllersor control systems 722 that can be coupled to control the variousprocessing modules and associated processing chambers/tools depicted inFIG. 7A during the integrated processing and measurement/metrologyprocess as disclosed herein. The controller/control system 722 can becoupled to one or more additional controllers/computers/databases (notshown) as well. Control system 722 can obtain setup and/or configurationinformation from an additional controller/computer or a server over anetwork. The control system 722 is used to configure and run any or allof the processing modules and processing tools and to gather data fromthe various measurement modules and in-situ data from the processingmodules to provide the active interdiction of the invention. Thecontroller 722 collects, provides, processes, stores, and displays datafrom any or all of the processing modules and tool components. Thecontrol system 722, as described further herein, can comprise a numberof different programs and applications and processing engines to analyzethe measured data and in-situ processing data and to implementalgorithms, such as deep learning networks, machine learning algorithms,autonomous learning algorithms and other algorithms for providing theactive interdiction of the invention.

As described further herein, the active interdiction control system 722can be implemented in one or more computer devices having amicroprocessor, suitable memory, and digital I/O port and is capable ofgenerating control signals and voltages that are sufficient tocommunicate, activate inputs to the various modules of the platform 700,and exchange information with the substrate processing systems run onthe platform 700. The control system 722 monitors outputs from theprocessing system of the platform 700 as well as measured data from thevarious measurement modules of the platform to run the platform. Forexample, a program stored in the memory of the control system 722 may beutilized to activate the inputs to the various processing systems andtransfer systems according to a process recipe or sequence in order toperform desired integrated workpiece processing.

The control system 722 also uses measured data as well as in-situprocessing data output by the processing modules to detectnon-conformities or defects in the workpiece and provide correctiveprocessing. As discussed herein, the control system 722 may beimplemented as a general-purpose computer system that performs a portionor all of the microprocessor-based processing steps of the invention inresponse to a processor executing one or more sequences of one or moreinstructions contained in a program in memory. Such instructions may beread into the control system memory from another computer readablemedium, such as a hard disk or a removable media drive. One or moreprocessors in a multi-processing arrangement may also be employed as thecontrol system microprocessor element to execute the sequences ofinstructions contained in memory. In alternative embodiments, hard-wiredcircuitry may be used in place of or in combination with softwareinstructions for implementing the invention. Thus, embodiments are notlimited to any specific combination of hardware circuitry and softwarefor executing the metrology driver processes of the invention asdiscussed herein.

The active interdiction control system 722 may be locally locatedrelative to the platform 700, or it may be remotely located relative tothe platform 700. For example, the controller 722 may exchange data withthe platform 700 using at least one of a direct connection, an intranetconnection, an Internet connection or a wireless connection. The controlsystem 722 may be coupled to an intranet at, for example, a customersite (i.e., a device maker, etc.), or it may be coupled to an intranetat, for example, a vendor site (i.e., an equipment manufacturer).Additionally, for example, the control system 722 may be coupled toother systems or controls through an appropriate wired or wirelessconnection. Furthermore, another computer (i.e., controller, server,etc.) may access, for example, the control system 722 to exchange datavia at least one of a direct wired connection or a wireless connection,such as an intranet connection, and/or an Internet connection. As alsowould be appreciated by those skilled in the art, the control system 722will exchange data with the modules of the common manufacturing platform700 via appropriate wired or wireless connections. The processingmodules may have their own individual control systems (not shown) thattake input data for control of the processing chambers and tools andsub-systems of the modules and provide in-situ output data regarding theprocess parameters and metrics during the processing sequence.

With specific reference to FIGS. 7A and 7B, and in accordance with oneembodiment, measurement data may be obtained in a measurement/metrologymodule 716 that is a separate module on the platform 700 coupled to thetransfer module 710. Generally, the transfer module 710 has a chamberthat incorporates one or more transfer mechanisms or robots 714 thatwill handle and move workpieces through the internal space of thechamber and into and out of the processing module in the processingsequence.

More specifically, the transfer mechanism 714 is positioned inside ofthe internal space 713 of the transfer module 710 that can define acontrolled environment and is configured for moving the workpiecesthrough the internal space and environment and selectively in and out ofthe plurality of processing modules 720 a-720 d and the measurementmodules 716 or into and out of a measurement region in a dedicated areaof the internal space in order for a measurement inspection system tomeasure data. In accordance with one feature of the invention, becausethe internal space 713 of the transfer module 710 and processing modules720 a-720 d and measurement modules 716 are coupled together on thecommon manufacturing platform 700, the controlled environment may bemaintained for the workpiece generally through most of or all of themeasurement and processing sequence. Such a controlled environment couldinvolve a vacuum environment or an inert gas atmosphere in the transfermodule or measurement module.

The transfer module 710 includes a plurality of access ports or sideports, each with a suitable gate G, through which a workpiece is movedto and from the plurality of processing modules 720 a-720 d. To providethe necessary processing sequence for efficient through-put on platform700, the plurality of processing modules 720 a-720 d includes modulesthat handle a variety of workpiece processing steps on the commonplatform, including one or more etching modules and one or morefilm-forming or deposition modules. The measurement module 716, asillustrated in FIG. 7A is coupled with the transfer module 710 also atone of the side or access ports through a suitable gate G. In otherembodiments, the measurement module is coupled with the transfer moduleat a port formed in the top of the transfer module. In still furtherembodiments as described herein, the transfer module acts as ameasurement module as well wherein at least a portion of the measurementmodule for capturing measurement data is incorporated or positionedinside of an internal space of the transfer module. The transfermeasurement module (TMM) in such an embodiment, as illustrated in FIGS.7C-7D, includes a measurement region located within a dedicated area ofthe internal space of the transfer module.

The active interdiction control system 722 collects workpiecemeasurement data generally on-the-fly as the substrate moves in theprocessing sequence between one or more of the processing modules andthe measurement/metrology module 716. The data is captured and thenanalyzed and processed to detect non-conformities and defects andprovide corrective processing as discussed herein. The activeinterdiction control system 722 provides the necessary control of theprocessing steps of the sequence to make control adjustments to variousfabrication processing steps as performed in order to correct for thedetected non-conformities/defects. Adjustments may be made to processsteps and processing modules that precede or are upstream of thecaptured measurement data and/or process steps that follow or aredownstream of the measurement data in sequence. Alternatively, asuitable corrective action or corrective processing might includeejection of the workpiece from the platform 700 in order to not wastefurther time and materials on a workpiece which cannot be saved.

Referring to FIG. 7B, one exemplary measurement module 716 isillustrated that incorporates an inspection system 730 for makingmeasurements on the workpiece within the controlled environment withrespect to the processing sequence executed on common manufacturingplatform 700.

The inspection system 730 measures data associated with an attribute ofthe workpiece, as discussed herein. The inspection system 730incorporates one or more signal sources 732 that direct a measurementsignal 734 toward a workpiece 736. Incident signals 734 are reflected orscattered from the surface of the workpiece 736 and the scatteredsignals 735 are captured by the detector 740. The detectors 740 generatemeasurement data 750 which may then be directed to the activeinterdiction control system 722 as described herein. In one embodiment,the workpiece 736 is positioned by transfer mechanism 714 on ameasurement platform 738 that may be translated side-to-side and up anddown and rotated as indicated by the arrows in FIG. 7B so that ameasurement signal 734 may be directed to various proper positions onthe workpiece 736.

That is, in the embodiment of FIG. 7B, the measurement module includes aseparate support mechanism 738 for supporting a workpiece 736 positionedin the measurement module 716. The inspection system engages the supportmechanism 738 for measuring data associated with a workpiece attributesupported on the support mechanism. In such a scenario, the supportmechanism 738 in the measurement module 716 is generally separate fromthe transfer mechanism that otherwise moves the workpiece 736 andpositions it on the support mechanism.

The separate support mechanism translates the workpiece 736, such asthrough vertical and/or horizontal movement and also may rotate theworkpiece 736 to provide at least two degrees of freedom for measuringdata associated with an attribute of the workpiece 736 as discussedherein. The support mechanism may also incorporate a temperature controlelement therein for controlling workpiece temperature. Therefore, in theembodiment of FIG. 7B, the support mechanism provides the support andmovement of the workpiece 736 necessary for the measurement of dataafter the workpiece 736 is positioned thereon by the transfer mechanism.In an alternative embodiment, the transfer mechanism may provide thefunction of supporting and moving the workpiece 736 for engagement withthe inspection system 730 for measuring data associated with anattribute on the workpiece 736.

The captured measurement data 750 may then be directed to control system722 and further evaluated and analyzed to determine a particular actionfor the measured workpiece. If the measurement data indicates that themeasured parameters are within specification of the desired design andfabrication process, and/or there are no actionable detected defects,the workpiece may proceed as normal through the process flow within theplatform 700. Alternatively, if the measured data 750 indicates that theworkpiece is beyond correction or amelioration, the workpiece might beejected from further processing. Alternatively, in accordance with anembodiment of the invention, the active interdiction control system 722may analyze the data and provide corrective processing as one or morecorrective steps to be taken for that workpiece or to be made in variousprocess steps of the overall process flow in order to correct thecurrent workpiece, and also to prevent the need for corrective action inother workpieces that are subsequently processed on the platform 700.Specifically, referring to FIG. 7B, the active interdiction controlsystem 722 may incorporate one or more processing steps and processingcomponents therein for yielding correction to the process flow. First,the necessary measurement data 750 may be captured and pre-processed asillustrated by block 754. Next, modeling and data analysis occurs on thecaptured data as well as any in-situ processing data associated with oneor more of the processing modules and process steps as indicated byblock 756. The modeling and analysis may utilize artificialintelligence, including deep learning and autonomous learning programsand components. Next, the analysis may provide corrective processcontrol wherein one or more of the processing steps and processingmodules are controlled to correct or ameliorate perceived or detectednon-conformities or defects in the layers and features that are out ofspecification with respect to the overall design for the workpiecefabrication. The corrective process control of block 758 may be providedto one or more of the processing steps or processing modules and it maybe applied to one or more processing steps that are previous in time(upstream) to the capture of the measurement data 750 or may be appliedto one or more of the process steps to follow (downstream) the captureof the measurement data 750 within the overall substrate fabricationaccording to the desirable design. The active interdiction controlsystem 722, and its processes as indicated by blocks 754, 756 and 758may be incorporated in software run by one or more computers of thecontrol system 722 and/or components of that system.

In accordance with embodiments of the invention, the inspection systemsfor obtaining measurement data engage the workpiece by performingcontact measurement or metrology or non-contact measurement or metrologydepending on the attribute measured or the type of measurement. Acombination of both contact and non-contact measurement might be used.Depending on the location of the inspection system, portions of theinspection system may be positioned partially or entirely inside aninternal space or chamber of a module. In the embodiment of FIG. 7A asdisclosed herein, dedicated measurement modules 716 may entirely containthe inspection system. Alternatively, a portion of a measurement modulemight be positioned inside of an internal space of a chamber, such asinside an internal space of a workpiece transfer module, with anotherportion of the measurement module located outside of the chamber. Suchan embodiment is illustrated in FIG. 7D for example wherein a transfermeasurement module is illustrated using a measurement region locatedwithin a dedicated area of the transfer chamber internal space and theinspection system is configured for engaging a workpiece positioned inthe measurement region for measuring data associated with an attributeon the workpiece.

Support mechanism 738 or transfer mechanism 714 holding workpiece 736may be translated and rotated to provide measurements of various areason the workpiece 736. In that way, measurement data may be captured atvarious portions or segments of the entire workpiece. Thus, continuousmeasurements or point-by-point measurements are possible therebyreducing the overall measurement time and processing time.

For example, the inspection system measures data over a portion of theworkpiece that is equal to or exceeding 1 square centimeter.Alternatively, the inspection system measures or images a substantiveportion of the workpiece that is equal to or exceeding 90% of theworking surface area of the workpiece. As noted, the inspection systemmay perform a measurement at plural discrete locations on the workingsurface of the workpiece or may perform a continuous sequence ofmeasurements across a portion of the workpiece. For example, theinspection system may perform a measurement along a path extendingacross or partially across the workpiece. Such a path may include aline, a sequence of lines, an arc, a circular curve, a spiral curve, anArchimedean spiral, a logarithmic spiral, a golden spiral, or somecombination thereof. Also, there may be several inspection systemswherein source/detector pairs 732, 740 may each represent a differentinspection signal from a different inspection system and may bedifferent forms of signals. For example, one source/detector pair 732,740 might use an optical signal while another source/detector pair 732,740 might use an electromagnetic signal, depending on the inspectionsystem.

The inspection system(s) can perform multiple measurements of attributeson a workpiece while the workpiece is in a measurement module or indedicated area of a transfer measurement module as discussed herein. Themeasurements may be made simultaneously in time. That is, differentinspection systems might make measurements at the same time.Alternatively, the various inspection systems might operate at differenttimes. For example, it may be necessary to move or position theworkpiece in one position for one type of measurement or inspectionsystem, and then move or position the workpiece for another measurementby the same or a different type of inspection system.

The inspection system(s) may be non-contact systems for providingnon-contact measurement and metrology. Alternatively, one or moreinspection systems of a measurement module or transfer measurementmodule might use a contact sensor that may be moved and positioned at asurface of the workpiece to make a measurement. The inspection systemsprovided in accordance with the invention may incorporate a combinationof contact inspection systems and non-contact inspection systems forgathering measurement data associated with an attribute of theworkpiece.

As described above, the inspection system as implemented in ameasurement module or in a transfer measurement module may be stationarywhile the support mechanism or workpiece transfer mechanism moves theworkpiece to engage with the inspection system and to take measurementsin different areas of the workpiece. Alternatively, the inspectionsystem 730, or some portion thereof, is movable with respect to theworkpiece support mechanism 738, the workpiece transfer mechanism 714and the module. The inspection system might be configured to translateand/or rotate with respect to the stationary workpiece to obtainmeasurement data from areas of the workpiece.

In other embodiments of the invention, the inspection system may beembedded in or part of a workpiece support mechanism. The inspectionsystem 730 might be mounted or supported on the support mechanism 738.Then, when the workpiece is positioned on the support mechanism, it willbe in a proper position for engagement by the inspection system. Aninspection system 730 might be embedded in the support mechanism so asto sit below or otherwise proximate to a positioned workpiece to providemeasurement data associated with a mass measurement or a temperaturemeasurement of the workpiece, for example.

FIG. 7C illustrates a common manufacturing platform 700′ incorporating atransfer module 710′ in accordance with one embodiment the inventionthat utilizes a dedicated area to form a measurement region whereinmeasurement data may be gathered from a workpiece during transit. Inthat way, as noted herein, the workpiece can be processed and measuredwhile remaining within a controlled environment, such as a vacuumenvironment. The workpiece does not need to leave the environment of theplatform 700′ for determining how the process is proceeding and fordetecting any non-conformities or defects. Accordingly, the embodimentas illustrated in FIG. 7CA forms a transfer measurement module (TMM)that may be utilized with one or more processing modules or as part of acommon manufacturing platform. Furthermore, multiple transfermeasurement modules may be utilized and interfaced together to cooperateand form a larger common manufacturing platform.

The inspection systems incorporated within a transfer measurement module(TMM) operate in and are similar to other inspection systems asdescribed herein. Such inspection systems as illustrated in FIG. 7D, forexample, only illustrate certain inspection systems. However, otherinspection systems and features, such as those discussed above, wouldalso be applicable to the transfer mechanism module is illustrated inFIG. 7C. As such, some common reference numerals are utilized in FIGS.7C-7D as previously discussed herein.

The platform 700′ incorporates a workpiece transfer module 710′ thatprovides measurement/metrology data. The transfer measurement module(TMM) 710′ includes a workpiece transfer mechanism, such as in the formof a handling robot 714 within the internal space of a transfer chamber713. The transfer mechanism 714 is operable as in platform 700 to moveone or more or more workpieces through the transfer module 710′ andbetween various of the processing modules that are coupled to transfermodule 710′ in the common manufacturing platform. In accordance with onefeature of the invention, transfer chamber 713 defines an internal spacethat includes a dedicated area that is used for measurement. Themeasurement region 715 of the TMM 710′ is located in the dedicated area.The measurement region/area 715 is proximate to one or more inspectionsystems 730 for measurement.

More specifically, the measurement region 715 is positioned within thetransfer chamber 713 so as to not interfere with the primary purpose ofthe transfer measurement module in moving workpieces through the processsequence and into and out of various processing modules. The measurementregion defines one or more positions for placement of a workpiece formeasurement. To that end, one or more inspection systems are configuredto engage a workpiece that is positioned in the measurement region ofthe transfer chamber 713. The inspection system is then operable formeasuring data associated with an attribute on the workpiece inaccordance with the invention. As noted with the inspection systemsdisclosed herein, a support mechanism might be located within themeasurement region 715 for supporting a workpiece during the collectionof measurement data by the inspection system. Alternatively, thetransfer mechanism 714 may provide the positioning and support of theworkpiece within the measurement region 715 of the transfer chamber. Inaccordance with embodiments of the invention, the workpiece can be movedinto or through the measurement region 715 during a processing sequenceto obtain measurement data from one or more inspection systems that areassociated with that measurement region. While a single measurementregion is illustrated in FIG. 7C for illustrative purposes, multiplemeasurement regions 715 might be incorporated into the TMM 710′.

Referring to FIG. 7D, the TMM module 710′ incorporates one or moreinspection systems 730 located within a measurement region 715 andprovides the ability to obtain real-time measurements and measurementdata during a processing sequence. In one embodiment, measurement region715 within the TMM 710′ incorporates a support mechanism 738 thatreceives a workpiece from mechanism 714 for measurement inside chamber713. Measurement data is captured as the workpiece is moved betweenprocessing modules. As discussed above, alternatively, the transfermechanism or robot 714 might actually act as a support mechanism formoving the workpiece with respect to the inspection system 730 in theTMM 710′. Still further, the inspection system 730 in the TMM 710′ mightalso incorporate a stationary workpiece wherein the inspection system730 itself moves. Similarly, the inspection system 730 might beincorporated as part of or embedded with the support mechanism.

The measurement module or inspection system 730 may be entirelycontained in the TMM 710′ to make measurements. In other embodiments, aleast a portion of the measurement module or inspection system ispositioned inside of an internal space of the TMM 710′ so as to define ameasurement region within a dedicated area of the internal space asshown in FIG. 7D, while other portions may reside outside the TMM 710′.More specifically, measurement region 715 is defined and is locatedwithin a dedicated area of the internal space of the transfer chamber713. The signal source and signal detector elements of inspection system730 may be located externally of the transfer chamber internal space 713while the workpiece support mechanism 738 and transfer mechanism 714 forsupporting a workpiece 736 are contained within the transfer chamber713. To that end, the inspection signals 734 pass through an appropriateaccess port 742 that is effectively transparent to the passage of theinspection signal 734 from the inspection system 730 and into theinternal space 713 to engage workpiece 736 positioned in the measurementregion 715. As noted, the inspection signal 734 might include anelectromagnetic signal, an optical signal, a particle beam, a chargedparticle beam, or some combination of such signals. The access port 742may be appropriately formed to operate with a specific inspection systemand the sources of the inspection signal. For example, the access port742 might include a window, an opening, a valve, a shutter, and iris, orsome combination of different structures for forming the access port inorder to allow incident inspection signals to engage the workpiece 736.To that end, at least a portion of the inspection system 730 might belocated generally above a top surface of the transfer chamber 713.

While the present invention has been illustrated by the description ofone or more embodiments thereof, and while the embodiments have beendescribed in considerable detail, they are not intended to restrict orin any way limit the scope of the appended claims to such detail.Additional advantages and modifications will readily appear to thoseskilled in the art. The invention in its broader aspects is thereforenot limited to the specific details, representative apparatus and methodand illustrative examples shown and described. Accordingly, departuresmay be made from such details without departing from the scope of thegeneral inventive concept.

What is claimed is:
 1. A method of forming a gate contact on asemiconductor workpiece using an integrated sequence of processing stepsexecuted on a common manufacturing platform hosting a plurality ofprocessing modules including one or more film-forming modules, one ormore etching modules, and one or more transfer modules, the integratedsequence of processing steps comprising: receiving a workpiece into thecommon manufacturing platform, the workpiece having a contact featureformed therein, the contact feature having a semiconductor contactsurface exposed at a bottom of the contact feature, the semiconductorcontact surface containing silicon, or germanium, or an alloy thereof;treating the semiconductor contact surface in one of the one or moreetching modules to remove contamination therefrom; depositing a metallayer within the contact feature in one of the one or more film-formingmodules; forming a metal silicide and/or germanide layer by reaction ofat least a portion of the deposited metal layer with the semiconductorcontact surface; and inspecting the workpiece before and/or after anyone of the treating, depositing, applying, and forming steps to measureone or more attributes of the workpiece, determine whether the measuredone or more attributes meet target specifications, and when an excursionfrom target specifications occurs, take corrective action before,during, or after any one of the integrated sequence of processing steps,wherein the integrated sequence of processing steps is executed in acontrolled environment within the common manufacturing platform andwithout leaving the controlled environment, and wherein the one or moretransfer modules are used to transfer the workpiece between theplurality of processing modules while maintaining the workpiece withinthe controlled environment.
 2. The method of claim 1, wherein thecontrolled environment includes a vacuum environment, an inert gasenvironment, or a combination thereof, wherein the vacuum environmentcomprises a sub-atmospheric pressure.
 3. The method of claim 2, whereinthe one or more film-forming modules and the one or more etchingmodules, include a vacuum environment, and the one or more transfermodules transfer the workpiece into and out of the film-forming and theetching modules without breaking vacuum.
 4. The method of claim 3,wherein the one or more film-forming modules comprise a metal depositionchamber, a dielectric film deposition chamber, or a combination thereof.5. The method of claim 4, wherein the etching modules comprise a plasmaetching module and a non-plasma etching module, wherein the plasmaetching modules comprises a plasma source disposed within the vacuumenvironment and the non-plasma etching module comprises a groundedworkpiece holder.
 6. The method of claim 1, wherein forming the metalsilicide layer occurs during the depositing using an elevated depositiontemperature.
 7. The method of claim 1, wherein forming the metalsilicide layer occurs by an annealing step performed after depositingthe metal layer.
 8. The method of claim 7, wherein the commonmanufacturing platform further hosts one or more annealing modules toform the metal silicide and/or germanide layer.
 9. The method of claim1, wherein depositing the metal layer includes conformally depositingthe metal layer on an adjacent topography to the contact feature and onsidewall surfaces and the bottom of the contact feature by chemicalvapor deposition or atomic layer deposition.
 10. The method of claim 1,further comprising applying a conductive capping layer on the depositedmetal layer in one of the one or more film-forming modules.
 11. Themethod of claim 9, wherein the one or more transfer modules furtherinclude a workpiece measurement region located within a dedicated areaof at least one of the one or more transfer modules, the integratedsequence of processing steps further comprising: during at least one ofthe transfers of the workpiece between the plurality of processingmodules, passing the workpiece into the workpiece measurement region andobtaining measurement data related to one or more attributes of theworkpiece.
 12. The method of claim 11, wherein the one or moreattributes include: attributes of the contact feature or the adjacenttopography, or both, as received into the common manufacturing platform;attributes of the contact feature or the adjacent topography after thetreating; attributes of one or more of the metal layer, the contactfeature, or the adjacent topography after the depositing; attributes ofthe conductive capping layer, the contact feature, or the adjacenttopography after the applying; or attributes of the metal silicideand/or germanide layer.
 13. The method of claim 11, wherein obtainingmeasurement data includes one or more of the following: measuring thecontact feature dimensions or a degree of oxidation of thesilicon-containing surface on the workpiece as received into the commonmanufacturing platform.
 14. The method of claim 12, wherein thecorrective action comprises adjusting one or more process parameters ofthe etching when the measurement data obtained indicates a deviationfrom one or more target values for the dimensions of the contact featureor the degree of oxidation.
 15. The method of claim 11, whereinobtaining measurement data includes measuring the contact featuredimensions and a degree of oxidation of the silicon-containing surfaceafter the etching and prior to depositing the metal layer.
 16. Themethod of claim 14, wherein the corrective action comprises anothertreatment of the contact semiconductor surface in the etching moduleprior to depositing the metal layer.
 17. The method of claim 11, whereinobtaining measurement data includes measuring thickness, thicknessuniformity, and/or conformality of the metal layer after applying themetal layer.
 18. The method of claim 16, wherein the corrective actionscomprise: adjusting a process parameters during the deposition of themetal layer on a subsequent workpiece; adjusting the anneal temperaturesor time on the workpiece during the forming of the metal silicide and/orgermanide layer; or applying another metal layer to the workpiece beforeforming the metal silicide and/or germanide layer.
 19. The method ofclaim 11, wherein obtaining measurement data includes measuringelectrical attributes of the metal silicide and/or germanide layer. 20.The method of claim 18, wherein the corrective actions comprise:exposing the workpiece to another anneal step; or adjusting processparameters during the deposition of the metal layer or the formation ofthe metal silicide layer on a subsequent workpiece.
 21. The method ofclaim 10, wherein obtaining measurement data includes measuringthickness and uniformity of the conductive capping layer after applyingthe conductive capping layer.
 22. The method of claim 20, wherein thecorrective actions comprise: applying an additional conductive cappinglayer to the workpiece when the conductive capping layer is smaller thana predetermined thickness value or the uniformity is larger than apredetermined uniformity value; or removing a portion of the conductivecapping layer from the workpiece when the conductive capping layer islarger than a predetermined value or the uniformity is larger than apredetermined uniformity value.
 23. The method of claim 1, furthercomprising treating the workpiece in one of the one or more etchingmodules to remove any metal layer that did not form into the metalsilicide.